摘要:
A method of operating a semiconductor memory device is provided as follows. The semiconductor memory device receive a bank address for a first bank including a first word line, a second word line and a third word line. The semiconductor memory device receive a first row address to activate the first world line for a read operation or a write operation. The semiconductor memory device generates a second row address to refresh a plurality of memory cells associated with the second word line.
摘要:
The PLL (Phase Locked Loop) apparatus and the PLL method are disclosed, wherein an output clock signal is counted in response to a reference clock signal to detect a frequency offset value and divide the output clock signal by a prescribed value to generate a phase detection value in response to the reference clock signal, generating a frequency error value to adjust a frequency of the output clock signal if the frequency offset value is not between a prescribed frequency offset maximum value and a predetermined frequency offset minimum value, and generating a phase error value in response to the phase detection value to adjust a phase of the output clock signal if the frequency offset value is in between a prescribed frequency offset maximum value and a prescribed frequency offset minimum value.
摘要:
In one example embodiment, a semiconductor system includes a first chip configured to generate first temperature information of the first chip, the first temperature information being based on at least one temperature measurement using at least one first temperature sensor. The semiconductor system further includes a second chip including a second temperature sensor configured to be controlled based on at least the first temperature information.