公开(公告)号：US20240313050A1

公开(公告)日：2024-09-19

申请号：US18673998

申请日：2024-05-24

申请人： Taiwan Semiconductor Manufacturering Co.,Ltd.

发明人： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC分类号： H01L29/06 ,  H01L27/088 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/0673 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device includes nanosheets between the source/drain regions, and a gate structure over the substrate and between the source/drain regions, the gate structure including a gate dielectric material around each of the nanosheets, a work function material around the gate dielectric material, a first capping material around the work function material, a second capping material around the first capping material, wherein the second capping material is thicker at a first location between the nanosheets than at a second location along a sidewall of the nanosheets, and a gate fill material over the second capping material.