公开(公告)号：US10163676B2

公开(公告)日：2018-12-25

申请号：US13929297

申请日：2013-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： Yen-Yu Chen ,  Wei-Jen Chen ,  Yi-Chen Chiang ,  Tsang-Yang Liu ,  Chang-Sheng Lee ,  Wei-Chen Liao ,  Wei Zhang

IPC: H01L21/687

Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

公开(公告)号：US20150000599A1

公开(公告)日：2015-01-01

申请号：US13929297

申请日：2013-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： Yen-Yu Chen ,  Wei-Jen Chen ,  Yi-Chen Chiang ,  Tsang-Yang Liu ,  Chang-Sheng Lee ,  Wei-Chen Liao ,  Wei Zhang

IPC: H01L21/02

CPC classification number: H01L21/68742

Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

Abstract translation: 一种装置包括基座和非反应性气体源。 基座具有通孔和晶片支撑表面。 每个通孔包括升降销和升降销头。 提升销在通孔中具有垂直的运动程度以提升或将基片放置在基座上。 提升销头具有至少一个流动通道结构，其从其第一表面延伸，至少部分地暴露于基座的底侧，其第二表面暴露于基座的顶侧，其中提升销。 非反应性气体源构造成通过流道结构通过基座的底侧将气体流动到晶片的背面。

公开(公告)号：US12080587B2

公开(公告)日：2024-09-03

申请号：US16994400

申请日：2020-08-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Yu Chen ,  Wei-Jen Chen ,  Yi-Chen Chiang ,  Tsang-Yang Liu ,  Chang-Sheng Lee ,  Wei-Chen Liao ,  Wei Zhang

IPC: H01L21/687

CPC classification number: H01L21/68742

Abstract: An apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

公开(公告)号：US10748806B2

公开(公告)日：2020-08-18

申请号：US16230765

申请日：2018-12-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Yu Chen ,  Wei-Jen Chen ,  Yi-Chen Chiang ,  Tsang-Yang Liu ,  Chang-Sheng Lee ,  Wei-Chen Liao ,  Wei Zhang

IPC: H01L21/687

Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.