公开(公告)号：US10163676B2

公开(公告)日：2018-12-25

申请号：US13929297

申请日：2013-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： Yen-Yu Chen ,  Wei-Jen Chen ,  Yi-Chen Chiang ,  Tsang-Yang Liu ,  Chang-Sheng Lee ,  Wei-Chen Liao ,  Wei Zhang

IPC: H01L21/687

Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

公开(公告)号：US09412671B1

公开(公告)日：2016-08-09

申请号：US14700557

申请日：2015-04-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Hsien-Chie Tsai ,  Chang-Sheng Lee ,  Fu-Yuan Chang ,  Hung-Yin Lin ,  Wen-Che Chang ,  Chien-Pin Hsu

IPC: H01L21/66 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/324

CPC classification number: H01L21/324 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67248

Abstract: A method for controlling processing temperature in semiconductor fabrication is provided. The method includes detecting temperature in a first chamber configured to process a semiconductor wafer. The method further includes creating a flow of heat-exchange medium in a second chamber which is connected to the first chamber to cool the first chamber. The method also includes controlling the flow of heat-exchange medium according to the temperature detected in the first chamber by changing a covered area of a first ventilation unit which allows the entry of the heat-exchange medium to the second chamber.

Abstract translation: 提供了一种用于控制半导体制造中的处理温度的方法。 该方法包括检测构造成处理半导体晶片的第一室中的温度。 该方法还包括在连接到第一室以冷却第一室的第二室中产生热交换介质流。 该方法还包括通过改变允许热交换介质进入第二室的第一通风单元的覆盖区域，根据第一室中检测到的温度来控制热交换介质的流动。

公开(公告)号：US09384949B2

公开(公告)日：2016-07-05

申请号：US14455019

申请日：2014-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zi-Neng Huang ,  Chang-Sheng Lee ,  Shen-Chieh Liu ,  Cherng-Chang Tsuei

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32449 ,  C23C16/45589 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/32834 ,  H01J2237/3323 ,  H01J2237/3343 ,  H01L21/3065 ,  H01L21/67069

Abstract: A gas-flow control method for a plasma apparatus is provided. The gas-flow control method includes mounting a first adjusting mechanism on a gas-distribution plate. The gas-distribution plate includes a number of exhaust openings, and the exhaust openings in a first area of the gas-distribution plate are masked by the first adjusting mechanism. The gas-flow control method also includes exhausting a gas from the exhaust openings in a first unmasked area of the gas-distribution plate, and the gas passing through the first adjusting mechanism into a plasma chamber. The gas-flow control method further includes generating an electric field to excite the gas in the plasma chamber into plasma.

Abstract translation: 提供了一种等离子体装置的气体流量控制方法。 气体流量控制方法包括将第一调节机构安装在气体分配板上。 气体分配板包括多个排气口，并且气体分配板的第一区域中的排气口被第一调节机构遮蔽。 气体流量控制方法还包括从气体分配板的第一未掩蔽区域中的排气口排出气体，并且将通过第一调节机构的气体排入等离子体室。 气体流量控制方法还包括产生电场以将等离子体室中的气体激发成等离子体。

公开(公告)号：US09343315B2

公开(公告)日：2016-05-17

申请号：US14092362

申请日：2013-11-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Liang Cheng ,  Chien-Hao Tseng ,  Yen-Yu Chen ,  Ching-Chia Wu ,  Chang-Sheng Lee ,  Wei Zhang

IPC: H01L21/469 ,  H01L21/28 ,  C23C16/44 ,  C23C16/448

CPC classification number: C23C16/4402 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/45544 ,  C23C16/45553 ,  H01L21/28158 ,  H01L21/28167 ,  H01L21/28185 ,  H01L29/517

Abstract: A method for fabricating a semiconductor structure is provided, including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film. A method for modifying a resistance film source in a semiconductor fabrication and a solid precursor delivery system are also provided. The method for fabricating a semiconductor structure in the present disclosure can remove small particles or ultra-small particles from solid precursor, and does not need extra time to dump cracked solid precursor.

Abstract translation: 提供一种制造半导体结构的方法，包括：提供具有第一平均粒度的固体前体; 将有机溶剂中的固体前体溶解成中间体; 使中间体重结晶形成固体颗粒，其中固体颗粒具有大于第一平均粒度的第二平均粒径; 蒸发固体颗粒以形成成膜气体; 并将成膜气体沉积在基板上以形成电阻膜。 还提供了一种用于修改半导体制造中的电阻膜源和固体前体输送系统的方法。 在本发明中制造半导体结构的方法可以从固体前驱物除去小颗粒或超小颗粒，并且不需要额外的时间来倾倒破裂的固体前体。

公开(公告)号：US20150000599A1

公开(公告)日：2015-01-01

申请号：US13929297

申请日：2013-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： Yen-Yu Chen ,  Wei-Jen Chen ,  Yi-Chen Chiang ,  Tsang-Yang Liu ,  Chang-Sheng Lee ,  Wei-Chen Liao ,  Wei Zhang

IPC: H01L21/02

CPC classification number: H01L21/68742

Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

Abstract translation: 一种装置包括基座和非反应性气体源。 基座具有通孔和晶片支撑表面。 每个通孔包括升降销和升降销头。 提升销在通孔中具有垂直的运动程度以提升或将基片放置在基座上。 提升销头具有至少一个流动通道结构，其从其第一表面延伸，至少部分地暴露于基座的底侧，其第二表面暴露于基座的顶侧，其中提升销。 非反应性气体源构造成通过流道结构通过基座的底侧将气体流动到晶片的背面。

公开(公告)号：US12080587B2

公开(公告)日：2024-09-03

申请号：US16994400

申请日：2020-08-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Yu Chen ,  Wei-Jen Chen ,  Yi-Chen Chiang ,  Tsang-Yang Liu ,  Chang-Sheng Lee ,  Wei-Chen Liao ,  Wei Zhang

IPC: H01L21/687

CPC classification number: H01L21/68742

Abstract: An apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

公开(公告)号：US10748806B2

公开(公告)日：2020-08-18

申请号：US16230765

申请日：2018-12-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yen-Yu Chen ,  Wei-Jen Chen ,  Yi-Chen Chiang ,  Tsang-Yang Liu ,  Chang-Sheng Lee ,  Wei-Chen Liao ,  Wei Zhang

IPC: H01L21/687

Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

公开(公告)号：US09803274B2

公开(公告)日：2017-10-31

申请号：US14080561

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Wei Bih ,  Wei-Jen Chen ,  Yen-Yu Chen ,  Hsien-Chieh Hsiao ,  Chang-Sheng Lee ,  Wei-Chen Liao ,  Wei Zhang

IPC: C23C14/35 ,  C23C14/34 ,  H01J37/34 ,  H01J37/32 ,  C23C14/56

CPC classification number: C23C14/34 ,  C23C14/564 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3411 ,  H01J37/3426 ,  H01J37/3447

Abstract: A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm.

公开(公告)号：US09611546B2

公开(公告)日：2017-04-04

申请号：US15099687

申请日：2016-04-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Liang Cheng ,  Chien-Hao Tseng ,  Yen-Yu Chen ,  Ching-Chia Wu ,  Chang-Sheng Lee ,  Wei Zhang

IPC: H01L21/469 ,  C23C16/44 ,  H01L21/28 ,  C23C16/448 ,  C23C16/455 ,  H01L29/51

CPC classification number: C23C16/4402 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/45544 ,  C23C16/45553 ,  H01L21/28158 ,  H01L21/28167 ,  H01L21/28185 ,  H01L29/517

Abstract: A method for fabricating a semiconductor structure and a solid precursor delivery system for a semiconductor fabrication is provided, the method including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film.

公开(公告)号：US09425109B2

公开(公告)日：2016-08-23

申请号：US14292162

申请日：2014-05-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Liang Cheng ,  Yen-Yu Chen ,  Chang-Sheng Lee ,  Wei Zhang

IPC: H01L21/66 ,  H01L21/306 ,  H01L21/67 ,  H01L21/3105 ,  B24B37/013 ,  B24B49/12

CPC classification number: B24B37/013 ,  B24B49/12 ,  H01L21/28088 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/67075 ,  H01L22/12 ,  H01L22/26 ,  H01L29/66545 ,  H01L29/7851

Abstract: A planarization method is provided. The planarization method includes providing a wafer, in which the wafer includes a work function layer, a surface layer formed on the work function layer and oxidized from the work function layer, and a planarization layer disposed on or above the surface layer, performing a chemical-mechanical planarization (CMP) process on the planarization layer, providing an incident light to a surface of the wafer under the CMP process, detecting absorption of the incident light by the surface layer; and stopping the CMP process in response to an increase in the detected absorption of the incident light.

Abstract translation: 提供了一种平面化方法。 平面化方法包括提供晶片，其中晶片包括功函数层，形成在功函数层上并从功函数层氧化的表面层，以及设置在表层上或表面层上的平坦化层，执行化学 在平坦化层上的机械平面化（CMP）工艺，在CMP工艺下向晶片的表面提供入射光，检测由表面层吸收的入射光; 并且响应于检测到的入射光的吸收的增加而停止CMP处理。