公开(公告)号：US11594678B2

公开(公告)日：2023-02-28

申请号：US16807600

申请日：2020-03-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Zhong ,  Cheng-Yuan Tsai ,  Hai-Dang Trinh ,  Shing-Chyang Pan

IPC: H01L45/00 ,  H01L27/24

Abstract: Some embodiments relate to a memory device. The memory device includes a bottom electrode overlying a substrate. A data storage layer overlies the bottom electrode. A top electrode overlies the data storage layer. A conductive bridge is selectively formable within the data storage layer to couple the bottom electrode to the top electrode. A diffusion barrier layer is disposed between the data storage layer and the top electrode.

公开(公告)号：US20210280780A1

公开(公告)日：2021-09-09

申请号：US16807600

申请日：2020-03-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Zhong ,  Cheng-Yuan Tsai ,  Hai-Dang Trinh ,  Shing-Chyang Pan

IPC: H01L45/00 ,  H01L27/24

Abstract: Some embodiments relate to a memory device. The memory device includes a bottom electrode overlying a substrate. A data storage layer overlies the bottom electrode. A top electrode overlies the data storage layer. A conductive bridge is selectively formable within the data storage layer to couple the bottom electrode to the top electrode. A diffusion barrier layer is disposed between the data storage layer and the top electrode.