公开(公告)号：US08952329B1

公开(公告)日：2015-02-10

申请号：US14045138

申请日：2013-10-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Chang Shih ,  Yi-Jie Chen ,  Chia-Cheng Chang ,  Feng-Yuan Chiu ,  Ying-Chou Cheng ,  Chiu Hsiu Chen ,  Bing-Syun Yeh ,  Ru-Gun Liu

IPC: G01N23/00 ,  G21K7/00 ,  G01B15/04

CPC classification number: H01L22/12 ,  G01B2210/56 ,  G03F7/70433 ,  G03F7/705

Abstract: A method for characterizing a three-dimensional surface profile of a semiconductor workpiece is provided. In this method, the three-dimensional surface profile is imaged from a normal angle to measure widths of various surfaces in a first image. The three-dimensional surface is also imaged from a first oblique angle to re-measure the widths of the various surfaces in a second image. Based on differences in widths of corresponding surfaces for first and second images, a feature height and sidewall angle are determined for the three-dimensional profile.

Abstract translation: 提供了一种用于表征半导体工件的三维表面轮廓的方法。 在该方法中，从正常角度对三维表面轮廓进行成像，以测量第一图像中的各种表面的宽度。 三维表面也从第一倾斜角度成像，以重新测量第二图像中各种表面的宽度。 基于第一和第二图像的相应表面的宽度差异，确定三维轮廓的特征高度和侧壁角度。