公开(公告)号：US10181425B1

公开(公告)日：2019-01-15

申请号：US15651749

申请日：2017-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chan-Yu Hung ,  Ling-Sung Wang ,  Yu-Jen Chen ,  I-Shan Huang

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/02 ,  H01L29/423 ,  H01L29/49 ,  H01L21/3065 ,  H01L21/027 ,  H01L21/308

Abstract: Semiconductor device structures with reduced gate end width formed at gate structures and methods for manufacturing the same are provided. In one example, a semiconductor device structure includes a plurality of gate structures formed over a plurality of fin structures, the gate structures formed substantially orthogonal to the fin structures, wherein the plurality of gate structures includes a first gate structure having a first gate end width and a second gate structure having a second gate end width, wherein the second gate end width is shorter than the first gate end width.

公开(公告)号：US12166108B2

公开(公告)日：2024-12-10

申请号：US17747104

申请日：2022-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chan-Yu Hung ,  Chia-Cheng Ho ,  Fei-Yun Chen ,  Yu-Chang Jong ,  Puo-Yu Chiang ,  Tun-Yi Ho

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/78

Abstract: The present disclosure describes a structure with a conductive plate and a method for forming the structure. The structure includes a gate structure disposed on a diffusion region of a substrate, a protective layer in contact with the diffusion region and covering a sidewall of the gate structure and a portion of a top surface of the gate structure, and a first insulating layer in contact with the gate structure and the protective layer. The structure further includes a conductive plate in contact with the first insulating layer, where a first portion of the conductive plate laterally extends over a horizontal portion of the protective layer, and where a second portion of the conductive plate extends over a sidewall portion of the protective layer covering the sidewall of the gate structure. The structure further includes a second insulating layer in contact with the conductive plate.

公开(公告)号：US20230378324A1

公开(公告)日：2023-11-23

申请号：US17747104

申请日：2022-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chan-Yu Hung ,  Chia-Cheng Ho ,  Fei-Yun Chen ,  Yu-Chang Jong ,  Puo-Yu Chiang ,  Tun-Yi Ho

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/40

CPC classification number: H01L29/66689 ,  H01L29/7824 ,  H01L29/402

Abstract: The present disclosure describes a structure with a conductive plate and a method for forming the structure. The structure includes a gate structure disposed on a diffusion region of a substrate, a protective layer in contact with the diffusion region and covering a sidewall of the gate structure and a portion of a top surface of the gate structure, and a first insulating layer in contact with the gate structure and the protective layer. The structure further includes a conductive plate in contact with the first insulating layer, where a first portion of the conductive plate laterally extends over a horizontal portion of the protective layer, and where a second portion of the conductive plate extends over a sidewall portion of the protective layer covering the sidewall of the gate structure. The structure further includes a second insulating layer in contact with the conductive plate.