公开(公告)号：US20220223634A1

公开(公告)日：2022-07-14

申请号：US17144757

申请日：2021-01-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che Wei Yang ,  Sheng-Chan Li ,  Tsun-Kai Tsao ,  Chih-Cheng Shih ,  Sheng-Chau Chen ,  Cheng-Yuan Tsai

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first image sensing element and a second image sensing element arranged over a substrate. A first micro-lens is arranged over the first image sensing element, and a second micro-lens is arranged over the second image sensing element. A composite deep trench isolation structure is arranged between the first and second image sensing elements. The composite deep trench isolation structure includes a lower portion arranged over the substrate and an upper portion arranged over the lower portion. The lower portion includes a first material, and the upper portion includes a second material that has a higher reflectivity than the first material.

公开(公告)号：US12027554B2

公开(公告)日：2024-07-02

申请号：US17144757

申请日：2021-01-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che Wei Yang ,  Sheng-Chan Li ,  Tsun-Kai Tsao ,  Chih-Cheng Shih ,  Sheng-Chau Chen ,  Cheng-Yuan Tsai

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first image sensing element and a second image sensing element arranged over a substrate. A first micro-lens is arranged over the first image sensing element, and a second micro-lens is arranged over the second image sensing element. A composite deep trench isolation structure is arranged between the first and second image sensing elements. The composite deep trench isolation structure includes a lower portion arranged over the substrate and an upper portion arranged over the lower portion. The lower portion includes a first material, and the upper portion includes a second material that has a higher reflectivity than the first material.

公开(公告)号：US12272715B2

公开(公告)日：2025-04-08

申请号：US17353003

申请日：2021-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chan Li ,  Hau-Yi Hsiao ,  Che Wei Yang ,  Sheng-Chau Chen ,  Cheng-Yuan Tsai

IPC: H01L27/146 ,  H01L21/768

Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a semiconductor substrate comprising a front-side surface opposite a back-side surface. A plurality of photodetectors is disposed in the semiconductor substrate. An isolation structure extends into the back-side surface of the semiconductor substrate and is disposed between adjacent photodetectors. The isolation structure includes a metal core, a conductive liner disposed between the semiconductor substrate and the metal core, and a first dielectric liner disposed between the conductive liner and the semiconductor substrate. The metal core comprises a first metal material and the conductive liner comprises the first metal material and a second metal material different from the first metal material.

公开(公告)号：US20220310678A1

公开(公告)日：2022-09-29

申请号：US17353003

申请日：2021-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chan Li ,  Hau-Yi Hsiao ,  Che Wei Yang ,  Sheng-Chau Chen ,  Cheng-Yuan Tsai

IPC: H01L27/146 ,  H01L21/768

Abstract: Various embodiments of the present disclosure are directed towards an image sensor having a semiconductor substrate comprising a front-side surface opposite a back-side surface. A plurality of photodetectors is disposed in the semiconductor substrate. An isolation structure extends into the back-side surface of the semiconductor substrate and is disposed between adjacent photodetectors. The isolation structure includes a metal core, a conductive liner disposed between the semiconductor substrate and the metal core, and a first dielectric liner disposed between the conductive liner and the semiconductor substrate. The metal core comprises a first metal material and the conductive liner comprises the first metal material and a second metal material different from the first metal material.