COMPOSITE DEEP TRENCH ISOLATION STRUCTURE IN AN IMAGE SENSOR

    公开(公告)号:US20220223634A1

    公开(公告)日:2022-07-14

    申请号:US17144757

    申请日:2021-01-08

    Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first image sensing element and a second image sensing element arranged over a substrate. A first micro-lens is arranged over the first image sensing element, and a second micro-lens is arranged over the second image sensing element. A composite deep trench isolation structure is arranged between the first and second image sensing elements. The composite deep trench isolation structure includes a lower portion arranged over the substrate and an upper portion arranged over the lower portion. The lower portion includes a first material, and the upper portion includes a second material that has a higher reflectivity than the first material.

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