公开(公告)号：US20220352321A1

公开(公告)日：2022-11-03

申请号：US17869321

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bau-Ming Wang ,  Che-Fu Chiu ,  Chun-Feng Nieh ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/10 ,  H01L29/66 ,  H01L27/092 ,  H01L29/08 ,  H01L29/49 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L21/265 ,  H01L21/266 ,  H01L21/74 ,  H01L21/8238

Abstract: A method of forming a semiconductor device includes implanting dopants of a first conductivity type into a semiconductor substrate to form a first well, epitaxially growing a channel layer over the semiconductor substrate, forming a fin from the second semiconductor material, and forming a gate structure over a channel region of the fin. The semiconductor substrate includes a first semiconductor material. Implanting the dopants may be performed at a temperature in a range of 150° C. to 500° C. The channel layer may include a second semiconductor material. The channel layer may be doped with dopants of the first conductivity type.

公开(公告)号：US11450743B2

公开(公告)日：2022-09-20

申请号：US17075992

申请日：2020-10-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bau-Ming Wang ,  Che-Fu Chiu ,  Chun-Feng Nieh ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/49 ,  H01L21/02 ,  H01L21/28 ,  H01L21/265 ,  H01L21/266 ,  H01L21/74 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes implanting dopants of a first conductivity type into a semiconductor substrate to form a first well, epitaxially growing a channel layer over the semiconductor substrate, forming a fin from the second semiconductor material, and forming a gate structure over a channel region of the fin. The semiconductor substrate includes a first semiconductor material. Implanting the dopants may be performed at a temperature in a range of 150° C. to 500° C. The channel layer may include a second semiconductor material. The channel layer may be doped with dopants of the first conductivity type.

公开(公告)号：US11127817B2

公开(公告)日：2021-09-21

申请号：US16121830

申请日：2018-09-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsan-Chun Wang ,  Chiao-Ting Tai ,  Che-Fu Chiu ,  Chun-Feng Nieh

IPC: H01L29/08 ,  H01L21/265 ,  H01L21/768 ,  H01L21/225 ,  H01L29/66 ,  H01L29/78

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a semiconductor structure over a semiconductor substrate. The method also includes implanting carbon into the semiconductor structure. The method further includes implanting gallium into the semiconductor structure. In addition, the method includes heating the semiconductor structure after the implanting of carbon and gallium.

公开(公告)号：US20250120146A1

公开(公告)日：2025-04-10

申请号：US18984095

申请日：2024-12-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bau-Ming Wang ,  Che-Fu Chiu ,  Chun-Feng Nieh ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H10D84/01 ,  H01L21/265 ,  H01L21/266 ,  H10D62/00 ,  H10D62/17 ,  H10D84/85

Abstract: A method of forming a semiconductor device includes implanting dopants of a first conductivity type into a semiconductor substrate to form a first well, epitaxially growing a channel layer over the semiconductor substrate, forming a fin from the second semiconductor material, and forming a gate structure over a channel region of the fin. The semiconductor substrate includes a first semiconductor material. Implanting the dopants may be performed at a temperature in a range of 150° C. to 500° C. The channel layer may include a second semiconductor material. The channel layer may be doped with dopants of the first conductivity type.

公开(公告)号：US12211901B2

公开(公告)日：2025-01-28

申请号：US17869321

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bau-Ming Wang ,  Che-Fu Chiu ,  Chun-Feng Nieh ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/10 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L21/28 ,  H01L21/74 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device may include a semiconductor fin, a source/drain region extending from the semiconductor fin, and a gate electrode over the semiconductor fin. The semiconductor fin may include a first well and a channel region over the first well. The first well may have a first dopant at a first dopant concentration and the channel region may have the first dopant at a second dopant concentration smaller than the first dopant concentration. The first dopant concentration may be in range from 1017 atoms/cm3 to 1019 atoms/cm3.

公开(公告)号：US20220123111A1

公开(公告)日：2022-04-21

申请号：US17075992

申请日：2020-10-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bau-Ming Wang ,  Che-Fu Chiu ,  Chun-Feng Nieh ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/10 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/265 ,  H01L29/49 ,  H01L21/02 ,  H01L21/266 ,  H01L21/28 ,  H01L21/74

Abstract: A method of forming a semiconductor device includes implanting dopants of a first conductivity type into a semiconductor substrate to form a first well, epitaxially growing a channel layer over the semiconductor substrate, forming a fin from the second semiconductor material, and forming a gate structure over a channel region of the fin. The semiconductor substrate includes a first semiconductor material. Implanting the dopants may be performed at a temperature in a range of 150° C. to 500° C. The channel layer may include a second semiconductor material. The channel layer may be doped with dopants of the first conductivity type.