公开(公告)号：US20170154978A1

公开(公告)日：2017-06-01

申请号：US14954208

申请日：2015-11-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Yu YEH ,  Chung-Cheng WU ,  Cheng-Long CHEN ,  Gwan-Sin CHANG ,  Pang-Yen TSAI ,  Yen-Ming CHEN ,  Yasutoshi OKUNO ,  Ying-Hsuan WANG

IPC: H01L29/66 ,  H01L21/308 ,  H01L29/165 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/3081 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: Methods for forming semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a hard mask structure over a substrate and etching the substrate through an opening of the hard mask structure to form a trench. The method for manufacturing a semiconductor structure further includes removing a portion of the hard mask structure to enlarge the opening and forming an epitaxial-growth structure in the trench and the opening.