公开(公告)号：US12287572B2

公开(公告)日：2025-04-29

申请号：US17232483

申请日：2021-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Hung Tsai ,  Sheng-Kang Yu ,  Shang-Chieh Chien ,  Heng-Hsin Liu ,  Li-Jui Chen

IPC: G03F7/00 ,  G03F7/20 ,  G03F7/22 ,  G03F7/36

Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.