公开(公告)号：US20190146349A1

公开(公告)日：2019-05-16

申请号：US16019732

申请日：2018-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Kuan WU ,  Po-Chung CHENG ,  Li-Jui CHEN ,  Chih-Tsung SHIH

IPC: G03F7/20 ,  G03F1/24

Abstract: A method for lithography in semiconductor fabrication is provided. The method includes placing a semiconductor wafer having a plurality of exposure fields over a wafer stage. The method further includes projecting an extreme ultraviolet (EUV) light over the semiconductor wafer. The method also includes securing the semiconductor wafer to the wafer stage by applying a first adjusted voltage to an electrode of the wafer stage while the EUV light is projected to a first group of the exposure fields of the semiconductor wafer. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.