公开(公告)号：US20230410932A1

公开(公告)日：2023-12-21

申请号：US18362525

申请日：2023-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsiang CHEN ,  Chih-Yang Chang ,  Chia Yu Wang ,  Meng-Chun Shih

IPC: G11C29/44 ,  G11C29/46 ,  G11C29/12

CPC classification number: G11C29/4401 ,  G11C29/46 ,  G11C29/12005 ,  G11C29/12015

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

公开(公告)号：US20230410931A1

公开(公告)日：2023-12-21

申请号：US17807967

申请日：2022-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hsiang CHEN ,  Chih-Yang CHANG ,  Chia Yu WANG ,  Meng-Chun SHIH

IPC: G11C29/44 ,  G11C29/46 ,  G11C29/12

CPC classification number: G11C29/4401 ,  G11C29/46 ,  G11C29/12005 ,  G11C29/12015

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.