公开(公告)号：US12237211B2

公开(公告)日：2025-02-25

申请号：US17377667

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Chang ,  Chen-Fong Tsai ,  Yun Chen Teng ,  Han-De Chen ,  Jyh-Cherng Sheu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/762 ,  H01L21/67

Abstract: A method of forming a semiconductor device includes mounting a bottom wafer on a bottom chuck and mounting a top wafer on a top chuck, wherein one of the bottom chuck and the top chuck has a gasket. The top chuck is moved towards the bottom chuck. The gasket forms a sealed region between the bottom chuck and the top chuck around the top wafer and the bottom wafer. An ambient pressure in the sealed region is adjusted. The top wafer is bonded to the bottom wafer.

公开(公告)号：US12165888B2

公开(公告)日：2024-12-10

申请号：US17532104

申请日：2021-11-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Chang ,  Jyh-Cherng Sheu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/683

Abstract: A method of forming a semiconductor device includes mounting a first wafer on a first wafer chuck and mounting a second wafer on a second wafer chuck. A push pin is extended through the first wafer chuck to distort the first wafer. A surface profile distortion of the first wafer is measured with a first surface profiler. A vacuum pressure of a vacuum zone on the first wafer chuck is adjusted using a measurement of the surface profile distortion. The first wafer chuck is moved towards the second wafer chuck so that the first wafer physically contacts the second wafer, and the first wafer is bonded to the second wafer.

公开(公告)号：US20240387232A1

公开(公告)日：2024-11-21

申请号：US18785067

申请日：2024-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Chang ,  Jyh-Cherng Sheu ,  Chen-Fong Tsai ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/683

Abstract: A method includes mounting a first wafer on a first wafer chuck and mounting a second wafer on a second wafer chuck. The second wafer is brought into physical contact with the first wafer. A relative distance between the first wafer and the second wafer is monitored using a distance sensor. A pressure of a vacuum zone on the second wafer chuck is controlled using feedback from the distance sensor. The bonded first wafer and second wafer are removed from the first wafer chuck.

公开(公告)号：US20220367215A1

公开(公告)日：2022-11-17

申请号：US17532104

申请日：2021-11-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Chang ,  Jyh-Cherng Sheu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/67 ,  H01L21/683

Abstract: A method of forming a semiconductor device includes mounting a first wafer on a first wafer chuck and mounting a second wafer on a second wafer chuck. A push pin is extended through the first wafer chuck to distort the first wafer. A surface profile distortion of the first wafer is measured with a first surface profiler. A vacuum pressure of a vacuum zone on the first wafer chuck is adjusted using a measurement of the surface profile distortion. The first wafer chuck is moved towards the second wafer chuck so that the first wafer physically contacts the second wafer, and the first wafer is bonded to the second wafer.

公开(公告)号：US20220344197A1

公开(公告)日：2022-10-27

申请号：US17532511

申请日：2021-11-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Chang ,  Jyh-Cherng Sheu ,  Chen-Fong Tsai ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/687 ,  H01L21/683 ,  H01L21/67

Abstract: A method includes mounting a first wafer on a first wafer chuck and mounting a second wafer on a second wafer chuck. The second wafer is brought into physical contact with the first wafer. A relative distance between the first wafer and the second wafer is monitored using a distance sensor. A pressure of a vacuum zone on the second wafer chuck is controlled using feedback from the distance sensor. The bonded first wafer and second wafer are removed from the first wafer chuck.

公开(公告)号：US20220367249A1

公开(公告)日：2022-11-17

申请号：US17377667

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Chang ,  Chen-Fong Tsai ,  Yun Chen Teng ,  Han-De Chen ,  Jyh-Cherng Sheu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/762 ,  H01L21/67

Abstract: A method of forming a semiconductor device includes mounting a bottom wafer on a bottom chuck and mounting a top wafer on a top chuck, wherein one of the bottom chuck and the top chuck has a gasket. The top chuck is moved towards the bottom chuck. The gasket forms a sealed region between the bottom chuck and the top chuck around the top wafer and the bottom wafer. An ambient pressure in the sealed region is adjusted. The top wafer is bonded to the bottom wafer.