公开(公告)号：US12266574B2

公开(公告)日：2025-04-01

申请号：US17738527

申请日：2022-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun Chen Teng ,  Chen-Fong Tsai ,  Li-Chi Yu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/3105 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/78

Abstract: FCVD using multi-step anneal treatment and devices thereof are disclosed. In an embodiment, a method includes depositing a flowable dielectric film on a substrate. The flowable dielectric film is deposited between a first semiconductor fin and a second semiconductor fin. The method further includes annealing the flowable dielectric film at a first anneal temperature for at least 5 hours to form a first dielectric film, annealing the first dielectric film at a second anneal temperature higher than the first anneal temperature to form a second dielectric film, annealing the second dielectric film at a third anneal temperature higher than the first anneal temperature to form an insulating layer, applying a planarization process to the insulating layer, and etching the insulating layer to STI regions on the substrate.

公开(公告)号：US20230063975A1

公开(公告)日：2023-03-02

申请号：US17459509

申请日：2021-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun Chen Teng ,  Chen-Fong Tsai ,  Han-De Chen ,  Jyh-Cherng Sheu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/762 ,  H01L29/423 ,  H01L29/417 ,  H01L29/40 ,  H01L29/66 ,  H01L29/786 ,  H01L29/06 ,  H01L21/67

Abstract: A method of forming a semiconductor device includes loading a first wafer and a second wafer into a wafer bonding system. A relative humidity within the wafer bonding system is measured a first time. After measuring the relative humidity, the relative humidity within the wafer bonding system may be adjusted to be within a desired range. When the relative humidity is within the desired range, the first wafer is bonded to the second wafer.

公开(公告)号：US20220406621A1

公开(公告)日：2022-12-22

申请号：US17479467

申请日：2021-09-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huicheng Chang ,  Jyh-Cherng Sheu ,  Chen-Fong Tsai ,  Yun Chen Teng ,  Han-De Chen ,  Yee-Chia Yeo

IPC: H01L21/56 ,  H01L25/00 ,  H01L25/065

Abstract: A method includes bonding a package component to a composite carrier. The composite carrier includes a base carrier and an absorption layer, and the absorption layer is between the base carrier and the package component. A laser beam is projected onto the composite carrier. The laser beam penetrates through the base carrier to ablate the absorption layer. The base carrier may then be separated from the package component.

公开(公告)号：US20240405096A1

公开(公告)日：2024-12-05

申请号：US18328207

申请日：2023-06-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun Chen Teng ,  Szu-Ying Chen ,  Yung-Chung Chen ,  Sen-Hong Syue ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

Abstract: A method includes etching a first trench in a semiconductor substrate to form a first fin and a second fin, and forming a shallow trench isolation (STI) region in the first trench, where forming the STI region includes depositing a first dielectric layer over top surfaces of the first fin and the second fin, and on sidewalls and a bottom surface of the first trench, the first dielectric layer including carbon, depositing a second dielectric layer over the first dielectric layer, and in the first trench, where the second dielectric layer fills the first trench, and performing an anneal process, where the anneal process releases carbon from the first dielectric layer into the second dielectric layer.

公开(公告)号：US11728406B2

公开(公告)日：2023-08-15

申请号：US17121343

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： De-Wei Yu ,  Cheng-Po Chau ,  Yun Chen Teng

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3213 ,  H01L27/092 ,  H01L21/3205 ,  H01L21/8238

CPC classification number: H01L29/66545 ,  H01L21/0262 ,  H01L21/02359 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02645 ,  H01L21/02664 ,  H01L21/32055 ,  H01L21/32137 ,  H01L21/823821 ,  H01L21/823864 ,  H01L27/0924 ,  H01L29/66795

Abstract: A method for forming a semiconductor device and a semiconductor device formed by the method are disclosed. In an embodiment, the method includes depositing a dummy dielectric layer on a fin extending from a substrate; depositing a dummy gate seed layer on the dummy dielectric layer; reflowing the dummy gate seed layer; etching the dummy gate seed layer; and selectively depositing a dummy gate material over the dummy gate seed layer, the dummy gate material and the dummy gate seed layer constituting a dummy gate.

公开(公告)号：US20230042726A1

公开(公告)日：2023-02-09

申请号：US17738527

申请日：2022-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun Chen Teng ,  Chen-Fong Tsai ,  Li-Chi Yu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/8234 ,  H01L21/3105

Abstract: FCVD using multi-step anneal treatment and devices thereof are disclosed. In an embodiment, a method includes depositing a flowable dielectric film on a substrate. The flowable dielectric film is deposited between a first semiconductor fin and a second semiconductor fin. The method further includes annealing the flowable dielectric film at a first anneal temperature for at least 5 hours to form a first dielectric film, annealing the first dielectric film at a second anneal temperature higher than the first anneal temperature to form a second dielectric film, annealing the second dielectric film at a third anneal temperature higher than the first anneal temperature to form an insulating layer, applying a planarization process to the insulating layer, and etching the insulating layer to STI regions on the substrate.

公开(公告)号：US12249592B2

公开(公告)日：2025-03-11

申请号：US17648236

申请日：2022-01-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-De Chen ,  Cheng-I Chu ,  Yun Chen Teng ,  Chen-Fong Tsai ,  Jyh-Cherng Sheu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/00 ,  H01L21/66 ,  H01L23/00

Abstract: A method includes placing a first wafer on a first wafer stage, placing a second wafer on a second wafer stage, and pushing a center portion of the first wafer to contact the second wafer. A bonding wave propagates from the center portion to edge portions of the first wafer and the second wafer. When the bonding wave propagates from the center portion to the edge portions of the first wafer and the second wafer, a stage gap between the top wafer stage and the bottom wafer stage is reduced.

公开(公告)号：US12237211B2

公开(公告)日：2025-02-25

申请号：US17377667

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Chang ,  Chen-Fong Tsai ,  Yun Chen Teng ,  Han-De Chen ,  Jyh-Cherng Sheu ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/762 ,  H01L21/67

Abstract: A method of forming a semiconductor device includes mounting a bottom wafer on a bottom chuck and mounting a top wafer on a top chuck, wherein one of the bottom chuck and the top chuck has a gasket. The top chuck is moved towards the bottom chuck. The gasket forms a sealed region between the bottom chuck and the top chuck around the top wafer and the bottom wafer. An ambient pressure in the sealed region is adjusted. The top wafer is bonded to the bottom wafer.

公开(公告)号：US20240153786A1

公开(公告)日：2024-05-09

申请号：US18410100

申请日：2024-01-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huicheng Chang ,  Jyh-Cherng Sheu ,  Chen-Fong Tsai ,  Yun Chen Teng ,  Han-De Chen ,  Yee-Chia Yeo

IPC: H01L21/56 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L25/0652 ,  H01L25/50

Abstract: A method includes bonding a package component to a composite carrier. The composite carrier includes a base carrier and an absorption layer, and the absorption layer is between the base carrier and the package component. A laser beam is projected onto the composite carrier. The laser beam penetrates through the base carrier to ablate the absorption layer. The base carrier may then be separated from the package component.

公开(公告)号：US20230352563A1

公开(公告)日：2023-11-02

申请号：US18342146

申请日：2023-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： De-Wei Yu ,  Cheng-Po Chau ,  Yun Chen Teng

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3213 ,  H01L27/092 ,  H01L21/3205 ,  H01L21/8238

CPC classification number: H01L29/66545 ,  H01L29/66795 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/32137 ,  H01L27/0924 ,  H01L21/02645 ,  H01L21/32055 ,  H01L21/02359 ,  H01L21/823864 ,  H01L21/823821 ,  H01L21/02664

Abstract: A method for forming a semiconductor device and a semiconductor device formed by the method are disclosed. In an embodiment, the method includes depositing a dummy dielectric layer on a fin extending from a substrate; depositing a dummy gate seed layer on the dummy dielectric layer; reflowing the dummy gate seed layer; etching the dummy gate seed layer; and selectively depositing a dummy gate material over the dummy gate seed layer, the dummy gate material and the dummy gate seed layer constituting a dummy gate.