公开(公告)号：US20210057517A1

公开(公告)日：2021-02-25

申请号：US16549835

申请日：2019-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Ting CHEN ,  Tsung-Han Tsai ,  Kun-Tsang Chuang ,  Po-Jen Wang ,  Ying-Hao Chen ,  Chien-Cheng Chuang

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/3213

Abstract: The present disclosure relates to an apparatus that includes a bottom electrode and a dielectric structure. The dielectric structure includes a first dielectric layer on the bottom electrode and the first dielectric layer has a first thickness. The apparatus also includes a blocking layer on the first dielectric layer and a second dielectric layer on the blocking layer. The second dielectric layer has a second thickness that is less than the first thickness. The apparatus further includes a top electrode over the dielectric structure.