公开(公告)号：US20250070064A1

公开(公告)日：2025-02-27

申请号：US18403064

申请日：2024-01-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ke-Gang Wen ,  Yu-Bey Wu ,  Liang-Wei Wang ,  Hsin-Feng Chen ,  Tsung-Chieh Hsiao ,  Chih Chuan Su ,  Dian-Hau Chen

IPC: H01L23/00 ,  H01L23/48 ,  H01L23/498 ,  H01L25/00 ,  H01L25/065

Abstract: An embodiment is a device including a first die and a substrate including a first surface and a second surface opposite the first surface. The device also includes an active device on the first surface of the substrate. The device also includes a first interconnect structure on the first surface of the substrate. The device also includes a through substrate via extending through the first interconnect structure and the substrate to the second surface of the substrate, the through substrate via being electrically coupled to metallization patterns in the first interconnect structure. The device also includes one or more material-filled trench structures extending from the second surface of the substrate into the substrate, the one or more material-filled trench structures being electrically isolated from the through substrate via.