公开(公告)号：US20240379802A1

公开(公告)日：2024-11-14

申请号：US18783194

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Lin Lee ,  Choh Fei Yeap ,  Da-Wen Lin ,  Chih Yeh

IPC: H01L29/423 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786

Abstract: A first gate-all-around (GAA) transistor is formed on the first fin structure; the first GAA transistor has a channel region within a first plurality of nanostructures. A second GAA transistor is formed on the second fin structure; the second GAA transistor has a second channel region configuration. The second GAA transistor has a channel region within a second plurality of nanostructures. The second plurality of nanostructures is less than the first plurality of nanostructures.

公开(公告)号：US20220238678A1

公开(公告)日：2022-07-28

申请号：US17465300

申请日：2021-09-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Lin LEE ,  Choh Fei YEAP ,  Da-Wen LIN ,  Chih Yeh

IPC: H01L29/423 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/786 ,  H01L29/66

Abstract: Methods include providing a first fin structure and a second fin structure each extending from a substrate. A first gate-all-around (GAA) transistor is formed on the first fin structure; the first GAA transistor has a channel region within a first plurality of nanostructures. A second GAA transistor is formed on the second fin structure; the second GAA transistor has a second channel region configuration. The second GAA transistor has a channel region within a second plurality of nanostructures. The second plurality of nanostructures is less than the first plurality of nanostructures.