公开(公告)号：US20220302281A1

公开(公告)日：2022-09-22

申请号：US17207359

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Wei LEE ,  Chii-Horng LI ,  Heng-Wen TING ,  Yee-Chia YEO ,  Yen-Ru LEE ,  Chih-Yun CHIN ,  Chih-Hung NIEN ,  Jing Yi YAN

IPC: H01L29/66 ,  H01L29/45 ,  H01L29/08 ,  H01L29/78 ,  H01L29/167 ,  H01L21/225 ,  H01L21/02 ,  H01L29/40

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.