公开(公告)号：US20160204245A1

公开(公告)日：2016-07-14

申请号：US14677405

申请日：2015-04-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Shiu-Ko JANGJIAN ,  Chi-Cherng JENG ,  Chih-Nan WU ,  Chun-Che LIN ,  Ting-Chun WANG

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/7851 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0649 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from the substrate. The FinFET device structure also includes an isolation structure formed on the substrate. The fin structure has a top portion and a bottom portion, and the bottom portion is embedded in the isolation structure. The FinFET device structure further includes a protection layer formed on the top portion of the fin structure. An interface is between the protection layer and the top portion of the fin structure, and the interface has a roughness in a range from about 0.1 nm to about 2.0 nm.

Abstract translation: 提供了一种翅片场设备结构及其形成方法。 FinFET器件结构包括从衬底延伸的衬底和鳍结构。 FinFET器件结构还包括形成在衬底上的隔离结构。 翅片结构具有顶部和底部，并且底部嵌入隔离结构中。 FinFET器件结构还包括形成在鳍结构的顶部上的保护层。 界面处于保护层和翅片结构的顶部之间，并且界面的粗糙度在约0.1nm至约2.0nm的范围内。

公开(公告)号：US20210043670A1

公开(公告)日：2021-02-11

申请号：US17078948

申请日：2020-10-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko JANGJIAN ,  Chih-Nan WU ,  Chun-Che LIN ,  Yu-Ku LIN

IPC: H01L27/146

Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The plurality of photo sensitive regions are in the semiconductor substrate. The dielectric layer is on a backside surface of the semiconductor substrate facing away from the plurality of photo sensitive regions. The grid structure is on a backside surface of the dielectric layer facing away from the semiconductor substrate. The grid structure includes a plurality of grid lines spaced from each other. The plurality of convex dielectric lenses are alternately arranged with the plurality of grid lines of the grid structure on the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are lower than top ends of the plurality of grid lines of the grid structure.

公开(公告)号：US20170040456A1

公开(公告)日：2017-02-09

申请号：US15332875

申请日：2016-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shiu-Ko JANGJIAN ,  Chi-Cherng JENG ,  Chih-Nan WU ,  Chun-Che LIN ,  Ting-Chun WANG

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/161 ,  H01L29/20 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/0649 ,  H01L29/161 ,  H01L29/20 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from the substrate. The FinFET device structure also includes an isolation structure formed on the substrate. The fin structure has a top portion and a bottom portion, and the bottom portion is embedded in the isolation structure. The FinFET device structure further includes a protection layer formed on the top portion of the fin structure. An interface is between the protection layer and the top portion of the fin structure, and the interface has a roughness in a range from about 0.1 nm to about 2.0 nm.

Abstract translation: 提供了一种翅片场设备结构及其形成方法。 FinFET器件结构包括从衬底延伸的衬底和鳍结构。 FinFET器件结构还包括形成在衬底上的隔离结构。 翅片结构具有顶部和底部，并且底部嵌入隔离结构中。 FinFET器件结构还包括形成在鳍结构的顶部上的保护层。 界面处于保护层和翅片结构的顶部之间，并且界面的粗糙度在约0.1nm至约2.0nm的范围内。

公开(公告)号：US20150171125A1

公开(公告)日：2015-06-18

申请号：US14109318

申请日：2013-12-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shiu-Ko JANGJIAN ,  Chih-Nan WU ,  Chun-Che LIN ,  Yu-Ku LIN

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor device includes a substrate, a photo sensitive element, a first dielectric structure and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The photo sensitive element is formed on the first side of the substrate for receiving incident light transmitted through the substrate. The first dielectric structure is formed on the second side of the substrate. At least one portion of the convex dielectric lens is located in the first dielectric structure. The convex dielectric lens has a convex side oriented toward the incident light and a planer side oriented toward the photo sensitive element.

Abstract translation: 图像传感器装置包括基板，感光元件，第一电介质结构和凸状电介质透镜。 衬底具有与第一侧相对的第一侧和第二侧。 光敏元件形成在基板的第一侧上，用于接收透过基板的入射光。 第一电介质结构形成在衬底的第二侧上。 凸状电介质透镜的至少一部分位于第一电介质结构中。 凸状电介质透镜具有朝向入射光的凸面，朝向感光元件的平面侧。