公开(公告)号：US10962875B2

公开(公告)日：2021-03-30

申请号：US16700336

申请日：2019-12-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsu-Ting Huang ,  Chih-Shiang Chou ,  Ru-Gun Liu

IPC: G03F1/36 ,  G03F1/80 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/26 ,  G03F1/78 ,  H01L21/027 ,  H01L21/66 ,  G06F30/20 ,  G06F30/398 ,  G06F119/18

Abstract: An integrated circuit (IC) method is provided. The method includes building a mask model to simulate an aerial mask image of a mask, and a compound lithography computational (CLC) model to simulate a wafer pattern; calibrating the mask model using a measured aerial mask image of the mask; calibrating the CLC model using measured wafer data and the calibrated mask model; performing an optical proximity correction (OPC) process to a mask pattern using the calibrated CLC model, thereby generating a corrected mask pattern for mask fabrication. Alternatively, the method includes measuring a mask image of a mask optically projected on a wafer with an instrument; calibrating a mask model using the measured mask image; calibrating a CLC model using measured wafer data and the calibrated mask model; and performing an OPC process to a mask pattern using the calibrated CLC model, thereby generating a corrected mask pattern for mask fabrication.

公开(公告)号：US20190094680A1

公开(公告)日：2019-03-28

申请号：US15813774

申请日：2017-11-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsu-Ting Huang ,  Chih-Shiang Chou ,  Ru-Gun Liu

IPC: G03F1/36 ,  G06F17/50 ,  H01L21/027 ,  H01L21/66 ,  G03F1/78 ,  G03F1/80 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/26

Abstract: The present disclosure provides an integrated circuit (IC) method in accordance with some embodiments. The method includes building a mask model to simulate a mask image and a compound lithography computational model to simulate a wafer pattern; calibrating the mask model using a measured mask image; calibrating the compound lithography computational model using a measured wafer data and the calibrated mask model; and performing an optical proximity correction (OPC) process to an IC pattern using the calibrated compound computational model, thereby generating a mask pattern for mask fabrication.