公开(公告)号：US11442356B2

公开(公告)日：2022-09-13

申请号：US16872212

申请日：2020-05-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang Lee ,  Pei-Cheng Hsu ,  Chih-Tao Chien ,  Ming-Wei Chen ,  Ta-Cheng Lien

IPC: G03F1/24 ,  G03F1/38 ,  G03F1/48

Abstract: A multi-layer reflective structure is disposed over the substrate. An amorphous capping layer is disposed over the multi-layer reflective structure. The amorphous capping layer may contain ruthenium, oxygen, niobium, nitrogen, tantalum, or zirconium. An amorphous layer may also be disposed between the multi-layer reflective structure and the amorphous capping layer. The amorphous layer includes amorphous silicon, amorphous silicon oxide, or amorphous silicon nitride.

公开(公告)号：US20210349386A1

公开(公告)日：2021-11-11

申请号：US16872212

申请日：2020-05-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang Lee ,  Pei-Cheng Hsu ,  Chih-Tao Chien ,  Ming-Wei Chen ,  Ta-Cheng Lien

IPC: G03F1/24

Abstract: A multi-layer reflective structure is disposed over the substrate. An amorphous capping layer is disposed over the multi-layer reflective structure. The amorphous capping layer may contain ruthenium, oxygen, niobium, nitrogen, tantalum, or zirconium. An amorphous layer may also be disposed between the multi-layer reflective structure and the amorphous capping layer. The amorphous layer includes amorphous silicon, amorphous silicon oxide, or amorphous silicon nitride.