公开(公告)号：US20200035780A1

公开(公告)日：2020-01-30

申请号：US16593078

申请日：2019-10-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fan HUANG ,  Chih-Yang PAI ,  Yuan-Yang HSIAO ,  Tsung-Chieh HSIAO ,  Hui-Chi CHEN ,  Dian-Hau CHEN ,  Yen-Ming CHEN

IPC: H01L49/02 ,  H01L23/64 ,  H01G4/10 ,  H01G4/012

Abstract: A metal-insulator-metal (MIM) capacitor structure and a method for forming the same are provided. The MIM capacitor structure includes a substrate, and the substrate includes a capacitor region and a non-capacitor region. The MIM capacitor structure includes a first electrode layer formed over the substrate, and a first spacer formed on a sidewall of the first electrode layer. The MIM capacitor structure includes a first dielectric layer formed on the first spacers, and a second electrode layer formed on the first dielectric layer. The second electrode layer extends from the capacitor region to the non-capacitor region, and the second electrode layer extends beyond an outer sidewall of the first spacer.

公开(公告)号：US20190131385A1

公开(公告)日：2019-05-02

申请号：US15794139

申请日：2017-10-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fan HUANG ,  Chih-Yang PAI ,  Yuan-Yang HSIAO ,  Tsung-Chieh HSIAO ,  Hui-Chi CHEN ,  Dian-Hau CHEN ,  Yen-Ming CHEN

IPC: H01L49/02 ,  H01G4/012 ,  H01G4/10 ,  H01L23/64

Abstract: A metal-insulator-metal (MIM) capacitor structure and a method for forming the same are provided. The MIM capacitor structure includes a substrate, a bottom electrode layer, a first dielectric layer, a top electrode layer and first dielectric spacers. The bottom electrode layer is positioned over the substrate. The first dielectric layer is positioned over the bottom electrode layer. The top electrode layer is positioned over the first dielectric layer. The first dielectric spacers are positioned on opposite sidewalls of the bottom electrode layer. The first dielectric layer has a first dielectric constant. The first dielectric spacers have a second dielectric constant that is lower than the first dielectric constant.