公开(公告)号：US20220359735A1

公开(公告)日：2022-11-10

申请号：US17872531

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Shu Wu ,  Ying-Ya Hsu ,  Ching-Yu Pan ,  Hsiu-Hao Tsao ,  An Chyi Wei ,  Yuan-Hung Chiu

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/02 ,  H01L27/088

Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.

公开(公告)号：US11437498B2

公开(公告)日：2022-09-06

申请号：US17113351

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Shu Wu ,  Ying-Ya Hsu ,  Ching-Yu Pan ,  Hsiu-Hao Tsao ,  An Chyi Wei ,  Yuan-Hung Chiu

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L21/02

Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.

公开(公告)号：US11735651B2

公开(公告)日：2023-08-22

申请号：US17872531

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chung-Shu Wu ,  Ying-Ya Hsu ,  Ching-Yu Pan ,  Hsiu-Hao Tsao ,  An Chyi Wei ,  Yuan-Hung Chiu

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/66 ,  H01L21/02 ,  H01L27/088

CPC classification number: H01L29/66818 ,  H01L21/02236 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/7853

Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.

公开(公告)号：US20210111272A1

公开(公告)日：2021-04-15

申请号：US17113351

申请日：2020-12-07

Applicant: Taiwan Semiconductor manufacturing Co., Ltd.

Inventor： Chung-Shu Wu ,  Ying-Ya Hsu ,  Ching-Yu Pan ,  Hsiu-Hao Tsao ,  An Chyi Wei ,  Yuan-Hung Chiu

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/02 ,  H01L27/088

Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.