公开(公告)号：US20190157138A1

公开(公告)日：2019-05-23

申请号：US15904915

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Cheng ,  Cheng-Ta Wu ,  Ming-Che Yang ,  Wei-Kung Tsai ,  Yong-En Syu ,  Yeur-Luen Tu ,  Chris Chen

IPC: H01L21/762 ,  H01L29/06 ,  H01L29/16

Abstract: The present disclosure, in some embodiments, relates to a method of forming an SOI substrate. The method may be performed by epitaxially forming a silicon-germanium (SiGe) layer over a sacrificial substrate and epitaxially forming a first active layer on the SiGe layer. The first active layer has a composition different than the SiGe layer. The sacrificial substrate and is flipped and the first active layer is bonded to an upper surface of a dielectric layer formed over a first substrate. The sacrificial substrate and the SiGe layer are removed and the first active layer is etched to define outermost sidewalls and to expose an outside edge of an upper surface of the dielectric layer. A contiguous active layer is formed by epitaxially forming a second active layer on the first active layer. The first active layer and the second active layer have a substantially same composition.

公开(公告)号：US20190259655A1

公开(公告)日：2019-08-22

申请号：US16405165

申请日：2019-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Cheng ,  Cheng-Ta Wu ,  Ming-Che Yang ,  Wei-Kung Tsai ,  Yong-En Syu ,  Yeur-Luen Tu ,  Chris Chen

IPC: H01L21/762 ,  H01L29/06 ,  H01L29/16

Abstract: The present disclosure, in some embodiments, relates to a silicon on insulator (SOI) substrate. The SOI substrate includes a dielectric layer disposed over a first substrate. The dielectric layer has an outside edge aligned with an outside edge of the first substrate. An active layer covers a first annular portion of an upper surface of the dielectric layer. The upper surface of the dielectric layer has a second annular portion that surrounds the first annular portion and extends to the outside edge of the dielectric layer. The second annular portion is uncovered by the active layer.

公开(公告)号：US11158534B2

公开(公告)日：2021-10-26

申请号：US16405165

申请日：2019-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Cheng ,  Cheng-Ta Wu ,  Ming-Che Yang ,  Wei-Kung Tsai ,  Yong-En Syu ,  Yeur-Luen Tu ,  Chris Chen

IPC: H01L21/762 ,  H01L29/06 ,  H01L29/16 ,  H01L21/84 ,  H01L27/12 ,  H01L21/02 ,  H01L21/311

Abstract: The present disclosure, in some embodiments, relates to a silicon on insulator (SOI) substrate. The SOI substrate includes a dielectric layer disposed over a first substrate. The dielectric layer has an outside edge aligned with an outside edge of the first substrate. An active layer covers a first annular portion of an upper surface of the dielectric layer. The upper surface of the dielectric layer has a second annular portion that surrounds the first annular portion and extends to the outside edge of the dielectric layer. The second annular portion is uncovered by the active layer.

公开(公告)号：US10304723B1

公开(公告)日：2019-05-28

申请号：US15904915

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Cheng ,  Cheng-Ta Wu ,  Ming-Che Yang ,  Wei-Kung Tsai ,  Yong-En Syu ,  Yeur-Luen Tu ,  Chris Chen

IPC: H01L21/762 ,  H01L29/06 ,  H01L29/16 ,  H01L27/12 ,  H01L21/84

Abstract: The present disclosure, in some embodiments, relates to a method of forming an SOI substrate. The method may be performed by epitaxially forming a silicon-germanium (SiGe) layer over a sacrificial substrate and epitaxially forming a first active layer on the SiGe layer. The first active layer has a composition different than the SiGe layer. The sacrificial substrate and is flipped and the first active layer is bonded to an upper surface of a dielectric layer formed over a first substrate. The sacrificial substrate and the SiGe layer are removed and the first active layer is etched to define outermost sidewalls and to expose an outside edge of an upper surface of the dielectric layer. A contiguous active layer is formed by epitaxially forming a second active layer on the first active layer. The first active layer and the second active layer have a substantially same composition.