公开(公告)号：US20220367480A1

公开(公告)日：2022-11-17

申请号：US17815968

申请日：2022-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun Po Chang ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Wei-Yang Lee ,  Tzu-Hsiang Hsu

IPC: H01L27/11 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.

公开(公告)号：US20210082925A1

公开(公告)日：2021-03-18

申请号：US17106457

申请日：2020-11-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun Po Chang ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Wei-Yang Lee ,  Tzu-Hsiang Hsu

IPC: H01L27/11 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.

公开(公告)号：US10854615B2

公开(公告)日：2020-12-01

申请号：US15941074

申请日：2018-03-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun Po Chang ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Wei-Yang Lee ,  Tzu-Hsiang Hsu

IPC: H01L29/06 ,  H01L27/11 ,  H01L29/66 ,  H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.

公开(公告)号：US20240389293A1

公开(公告)日：2024-11-21

申请号：US18785442

申请日：2024-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun Po Chang ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Wei-Yang Lee ,  Tzu-Hsiang Hsu

IPC: H10B10/00 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.

公开(公告)号：US11495606B2

公开(公告)日：2022-11-08

申请号：US17106457

申请日：2020-11-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun Po Chang ,  Chen-Ming Lee ,  Fu-Kai Yang ,  Mei-Yun Wang ,  Wei-Yang Lee ,  Tzu-Hsiang Hsu

IPC: H01L29/66 ,  H01L27/11 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78

Abstract: A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.