公开(公告)号：US09620503B1

公开(公告)日：2017-04-11

申请号：US14941662

申请日：2015-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-I Liao ,  Shih-Chieh Chang ,  Chun-Ju Huang ,  Chien-Wei Lee ,  Chii-Ming Wu

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/311

CPC classification number: H01L27/0886 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A FinFET including a substrate, a plurality of isolators, a gate stack, and strained material portions is provided. The substrate includes at least two fins thereon. The isolators are disposed on the substrate, and each of the insulators between the fins has a recess profile. The gate stack is disposed over portions of the fins and over the insulators. The strained material portions cover the fins revealed by the gate stack. In addition, a method for fabricating the FinFET is provided.