公开(公告)号：US20190165167A1

公开(公告)日：2019-05-30

申请号：US16173721

申请日：2018-10-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chou LIN ,  Yi-Cheng CHIU ,  Karthick MURUKESAN ,  Yi-Min CHEN ,  Shiuan-Jeng LIN ,  Wen-Chih CHIANG ,  Chen-Chien CHANG ,  Chih-Yuan CHAN ,  Kuo-Ming WU ,  Chun-Lin TSAI

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.