公开(公告)号：US20190165167A1

公开(公告)日：2019-05-30

申请号：US16173721

申请日：2018-10-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chou LIN ,  Yi-Cheng CHIU ,  Karthick MURUKESAN ,  Yi-Min CHEN ,  Shiuan-Jeng LIN ,  Wen-Chih CHIANG ,  Chen-Chien CHANG ,  Chih-Yuan CHAN ,  Kuo-Ming WU ,  Chun-Lin TSAI

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/40

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

公开(公告)号：US20200266295A1

公开(公告)日：2020-08-20

申请号：US15929547

申请日：2020-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ker-Hsiao HUO ,  Kong-Beng THEI ,  Chien-Chih CHOU ,  Yi-Min CHEN ,  Chen-Liang CHU

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10

Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate, a gate, a first doped region and a second doped region. The gate is over the substrate. The first doped region and the second doped region are in the substrate. The first doped region and the second doped region are of a same conductivity type and separated by the gate. The length of the first doped region is greater than a length of the second doped region in a direction substantially perpendicular to a channel length defined between the first doped region and the second doped region.