公开(公告)号：US20150155394A1

公开(公告)日：2015-06-04

申请号：US14093269

申请日：2013-11-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Tse TSAI ,  Chia-Ping LAI

IPC: H01L29/792 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/792 ,  H01L21/28282 ,  H01L29/42344 ,  H01L29/66833

Abstract: Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a word line cell disposed over the substrate. The semiconductor device structure includes a substrate and a control gate formed over the substrate. The semiconductor device further includes an insulating layer formed on a sidewall of the control gate and a memory gate formed adjacent to the insulating layer. In addition, the insulating layer has a first height, and the memory gate has a second height shorter than the first height.

Abstract translation: 提供半导体器件结构的机构的实施例。 半导体器件结构包括衬底和设置在衬底上的字线单元。 半导体器件结构包括衬底和形成在衬底上的控制栅极。 半导体器件还包括形成在控制栅极的侧壁上的绝缘层和邻近绝缘层形成的存储栅极。 此外，绝缘层具有第一高度，并且存储栅极具有比第一高度短的第二高度。