公开(公告)号：US10720487B2

公开(公告)日：2020-07-21

申请号：US16260439

申请日：2019-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu Ku ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Wei-Li Huang ,  Chun-Yi Wu ,  Chen-Shien Chen

IPC: H01L49/02

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an etch stop layer over a semiconductor substrate and forming a magnetic element over the etch stop layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes forming a conductive line over the isolation element. In addition, the method includes forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.

公开(公告)号：US11094776B2

公开(公告)日：2021-08-17

申请号：US16432625

申请日：2019-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng Chen ,  Wei-Li Huang ,  Chun-Yi Wu ,  Kuang-Yi Wu ,  Hon-Lin Huang ,  Chih-Hung Su ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC: H01L21/677 ,  H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.

公开(公告)号：US11329124B2

公开(公告)日：2022-05-10

申请号：US16907699

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu Ku ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Wei-Li Huang ,  Chun-Yi Wu ,  Chen-Shien Chen

IPC: H01L49/02

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The isolation element partially covers a top surface of the magnetic element. The semiconductor device structure further includes a conductive line over the isolation element. In addition, the semiconductor device structure includes a dielectric layer over the conductive line and the magnetic element.

公开(公告)号：US12261026B2

公开(公告)日：2025-03-25

申请号：US17219181

申请日：2021-03-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi-Hsing Lin ,  Chen-Fon Chang ,  Chun-Yi Wu ,  Shi-Yu Ke ,  Chih-Teng Liao

IPC: H01J37/32 ,  C23C16/52 ,  H01L21/66 ,  H01L21/67

Abstract: Methods for revitalizing components of a plasma processing apparatus that includes a sensor for detecting a thickness or roughness of a peeling weakness layer on a protective surface coating of a plasma processing tool and/or for detecting airborne contaminants generated by such peeling weakness layer. The method includes detecting detrimental amounts of peeling weakness layer buildup or airborne concentration of atoms or molecules from the peeling weakness layer, and initiating a revitalization process that bead beats the peeling weakness layer to remove it from the component while maintaining the integrity of the protective surface coating.