公开(公告)号：US11329124B2

公开(公告)日：2022-05-10

申请号：US16907699

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu Ku ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Wei-Li Huang ,  Chun-Yi Wu ,  Chen-Shien Chen

IPC: H01L49/02

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation element over the magnetic element. The isolation element partially covers a top surface of the magnetic element. The semiconductor device structure further includes a conductive line over the isolation element. In addition, the semiconductor device structure includes a dielectric layer over the conductive line and the magnetic element.

公开(公告)号：US11233116B2

公开(公告)日：2022-01-25

申请号：US16933062

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng Chen ,  Wei-Li Huang ,  Chien-Chih Kuo ,  Hon-Lin Huang ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC: H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The magnetic element has a first edge. The semiconductor device structure also includes an adhesive element between the magnetic element and the semiconductor substrate, and the adhesive element has a second edge. The semiconductor device structure further includes an isolation element extending across the magnetic element. The isolation element partially covers a top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The isolation element has a third edge, and the second edge is closer to the third edge than the first edge. In addition, the semiconductor device structure includes a conductive line over the isolation element.

公开(公告)号：US10756162B2

公开(公告)日：2020-08-25

申请号：US16260599

申请日：2019-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng Chen ,  Wei-Li Huang ,  Chien-Chih Kuo ,  Hon-Lin Huang ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC: H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an adhesive layer over a semiconductor substrate and forming a magnetic element over the adhesive layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes partially removing the adhesive layer such that an edge of the adhesive layer is laterally disposed between an edge of the magnetic element and an edge of the isolation element. In addition, the method includes forming a conductive line over the isolation element.

公开(公告)号：US10263064B2

公开(公告)日：2019-04-16

申请号：US15638387

申请日：2017-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu Ku ,  Chien-Chih Chou ,  Chen-Shien Chen ,  Hon-Lin Huang ,  Chi-Cheng Chen ,  Kuang-Yi Wu

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/00

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor device includes an inductor structure, and the inductor structure is on a substrate and includes a first metal layer, a magnetic stack, a polymer layer and a second metal layer. The first metal layer is over the substrate. The magnetic stack is over the first metal layer and has a substantially zigzag shaped sidewall. The polymer layer is over the first metal layer and encapsulates the magnetic stack. The second metal layer is over the polymer layer.

公开(公告)号：US20230290809A1

公开(公告)日：2023-09-14

申请号：US17828844

申请日：2022-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mei-Chi Lee ,  Chi-Cheng Chen ,  Wei-Li Huang ,  Kai Tzeng ,  Chun Yi Wu ,  Ming-Da Cheng

IPC: H01L49/02

CPC classification number: H01L28/10

Abstract: A method of forming a semiconductor device includes: forming a passivation layer over a conductive pad that is disposed over a substrate; and forming an inductive component over the passivation layer, including: forming a first insulation layer and a first magnetic layer successively over the passivation layer; forming a first polymer layer over the first magnetic layer; forming a first conductive feature over the first polymer layer; forming a second polymer layer over the first polymer layer and the first conductive feature; patterning the second polymer layer, where after the patterning, a first sidewall of the second polymer layer includes multiple segments, where an extension of a first segment of the multiple segments intersects the second polymer layer; and after patterning the second polymer layer, forming a second insulation layer and a second magnetic layer successively over the second polymer layer.

公开(公告)号：US11094776B2

公开(公告)日：2021-08-17

申请号：US16432625

申请日：2019-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng Chen ,  Wei-Li Huang ,  Chun-Yi Wu ,  Kuang-Yi Wu ,  Hon-Lin Huang ,  Chih-Hung Su ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC: H01L21/677 ,  H01L49/02 ,  H01F41/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/532

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a passivation layer over a semiconductor substrate. The method also includes forming a magnetic element over the passivation layer. The method further includes forming an isolation layer over the magnetic element and the passivation layer. The isolation layer includes a polymer material. In addition, the method includes forming a conductive line over the isolation layer, and the conductive line extends across the magnetic element.

公开(公告)号：US10748810B2

公开(公告)日：2020-08-18

申请号：US15991523

申请日：2018-05-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Li Yang ,  Wei-li Huang ,  Sheng-Pin Yang ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Chin-Yu Ku ,  Chen-Shien Chen

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/04 ,  H01L23/522 ,  H01L49/02 ,  H01F41/04 ,  H01F17/00 ,  H01L23/532

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first conductive line over a substrate. The method includes forming a first protection cap over a first portion of the first conductive line. The first protection cap and the first conductive line are made of different conductive materials. The method includes forming a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The method includes forming a first opening in the first photosensitive dielectric layer and over the first protection cap. The method includes forming a conductive via structure and a second conductive line over the first conductive line. The conductive via structure is in the first opening and over the first protection cap, and the second conductive line is over the conductive via structure and the first photosensitive dielectric layer.

公开(公告)号：US20190006455A1

公开(公告)日：2019-01-03

申请号：US15638387

申请日：2017-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu Ku ,  Chien-Chih Chou ,  Chen-Shien Chen ,  Hon-Lin Huang ,  Chi-Cheng Chen ,  Kuang-Yi Wu

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/00

Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor device includes an inductor structure, and the inductor structure is on a substrate and includes a first metal layer, a magnetic stack, a polymer layer and a second metal layer. The first metal layer is over the substrate. The magnetic stack is over the first metal layer and has a substantially zigzag shaped sidewall. The polymer layer is over the first metal layer and encapsulates the magnetic stack. The second metal layer is over the polymer layer.

公开(公告)号：US10720487B2

公开(公告)日：2020-07-21

申请号：US16260439

申请日：2019-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Yu Ku ,  Chi-Cheng Chen ,  Hon-Lin Huang ,  Wei-Li Huang ,  Chun-Yi Wu ,  Chen-Shien Chen

IPC: H01L49/02

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming an etch stop layer over a semiconductor substrate and forming a magnetic element over the etch stop layer. The method also includes forming an isolation element extending across the magnetic element. The isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element. The method further includes forming a conductive line over the isolation element. In addition, the method includes forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.

公开(公告)号：US20240234481A1

公开(公告)日：2024-07-11

申请号：US18150912

申请日：2023-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Shu Yang ,  Chun Yi Wu ,  Kai Tzeng ,  Yuh-Sen Chang ,  Chi-Cheng Chen ,  Chi-Chun Peng

IPC: H01L27/08

CPC classification number: H01L28/10

Abstract: A method of forming a semiconductor device, the method including forming a first insulation layer over a substrate, depositing a first stack of magnetic layers over the first insulation layer, etching the first stack of magnetic layers such that a sidewall of the first stack of magnetic layers forms a stairstep pattern, forming a first photosensitive layer over the first stack of magnetic layers, the first insulation layer, and the substrate, wherein a thickness of the first photosensitive layer above a center of a first step of the stairstep pattern is different from a thickness of the first photosensitive layer above a center of a second step of the stairstep pattern, forming a first conductive feature over the first photosensitive layer, depositing a second insulation layer over the first photosensitive layer and the first conductive feature, and depositing a second magnetic layer over the second insulation layer.