公开(公告)号：US10797031B2

公开(公告)日：2020-10-06

申请号：US16136262

申请日：2018-09-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang Liao ,  Cheng-Chun Tsai ,  Chen-Hua Yu ,  Fang-Cheng Chen ,  Wen-Chih Chiou ,  Ping-Jung Wu

IPC: G02B6/122 ,  H01L25/16 ,  H04B10/40 ,  H01L23/00 ,  H01L23/29 ,  H01L23/522 ,  G02B6/42

Abstract: A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The second optical transceiver is stacked on the first optical transceiver. The third optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The third optical transceiver is stacked on the second optical transceiver. The plasmonic waveguide penetrates through the second optical transceiver and optically couples the at least one optical input/output portion of the first optical transceiver and the at least one optical input/output portion of the third optical transceiver.

公开(公告)号：US20200312709A1

公开(公告)日：2020-10-01

申请号：US16874677

申请日：2020-05-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jih-Jse Lin ,  Ryan Chia-Jen Chen ,  Fang-Cheng Chen ,  Ming-Ching Chang

IPC: H01L21/762 ,  H01L21/8234 ,  H01L21/764 ,  H01L27/088 ,  H01L21/3065 ,  H01L29/66

Abstract: A method of forming a FinFET device includes following steps. A substrate is provided with a plurality of fins thereon, an isolation layer thereon covering lower portions of the fins, a plurality of dummy strips across the fins, and a dielectric layer aside the dummy strips. The dummy strips is cut to form a trench in the dielectric layer. A first insulating structure is formed in the trench, wherein first and second groups of the dummy strips are beside the first insulating structure. A dummy strip is removed from the first group of the dummy strips to form a first opening that exposes portions of the fins under the dummy strip. The portions of the fins are removed to form a plurality of second openings below the first opening, wherein each second opening has a middle-wide profile. A second insulating structure is formed in the first and second openings.

公开(公告)号：US20200098736A1

公开(公告)日：2020-03-26

申请号：US16136262

申请日：2018-09-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang Liao ,  Cheng-Chun Tsai ,  Chen-Hua Yu ,  Fang-Cheng Chen ,  Wen-Chih Chiou ,  Ping-Jung Wu

IPC: H01L25/16 ,  G02B6/122 ,  G02B6/42 ,  H01L23/00 ,  H01L23/29 ,  H01L23/522 ,  H04B10/40

Abstract: A semiconductor package includes a first optical transceiver, a second optical transceiver, a third optical transceiver, and a plasmonic waveguide. The first optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The second optical transceiver is stacked on the first optical transceiver. The third optical transceiver includes at least one optical input/output portion for transmitting and receiving optical signal. The third optical transceiver is stacked on the second optical transceiver. The plasmonic waveguide penetrates through the second optical transceiver and optically couples the at least one optical input/output portion of the first optical transceiver and the at least one optical input/output portion of the third optical transceiver.

公开(公告)号：US10914895B2

公开(公告)日：2021-02-09

申请号：US16133710

申请日：2018-09-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang Liao ,  Cheng-Chun Tsai ,  Chen-Hua Yu ,  Fang-Cheng Chen ,  Wen-Chih Chiou ,  Ping-Jung Wu

IPC: G02B6/125 ,  G02B6/42 ,  G02B6/122 ,  G02B6/43 ,  H01L23/522

Abstract: A package structure including a plurality of first dies and an insulating encapsulant is provided. The plurality of first dies each include a first waveguide layer having a first waveguide path of a bent pattern, wherein the first waveguide layers of the plurality of first dies are optically coupled to each other to form an optical route. The insulating encapsulant encapsulates the plurality of first dies.

公开(公告)号：US10333623B1

公开(公告)日：2019-06-25

申请号：US16016657

申请日：2018-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang Liao ,  Cheng-Chun Tsai ,  Chen-Hua Yu ,  Fang-Cheng Chen ,  Wen-Chih Chiou ,  Ping-Jung Wu

IPC: G02B6/42 ,  H01L33/56 ,  H01L33/62 ,  H04B10/40

Abstract: An optical transceiver including a photonic integrated circuit component, an electric integrated circuit component and an insulating encapsulant is provided. The photonic integrated circuit component includes at least one optical input/output portion configured to transmit and receive optical signal. The electric integrated circuit component is disposed on and electrically connected to the photonic integrated circuit component. The insulating encapsulant covers the at least one optical input/output portion of the photonic integrated circuit component. The insulating encapsulant laterally encapsulates the electric integrated circuit component. The insulating encapsulant is optically transparent to the optical signal.

公开(公告)号：US10658225B2

公开(公告)日：2020-05-19

申请号：US15874889

申请日：2018-01-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jih-Jse Lin ,  Ryan Chia-Jen Chen ,  Fang-Cheng Chen ,  Ming-Ching Chang

IPC: H01L21/762 ,  H01L21/8234 ,  H01L21/764 ,  H01L27/088 ,  H01L21/3065 ,  H01L29/66 ,  H01L29/78 ,  H01L21/311 ,  H01L29/165

Abstract: FinFET devices and methods of forming the same are disclosed. One of the FinFET devices includes first fins, second fins, a first gate strip, a second gate strip and a comb-like insulating structure. The first and second fins are disposed on a substrate. The first gate strip is disposed across the first fins. The second gate strip is disposed across the second fins. The comb-like insulating structure is disposed between the first gate strip and the second gate strip and has a plurality of comb tooth parts. In some embodiments, each of the comb tooth parts has a middle-wide profile.

公开(公告)号：US20200091124A1

公开(公告)日：2020-03-19

申请号：US16133710

申请日：2018-09-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang Liao ,  Cheng-Chun Tsai ,  Chen-Hua Yu ,  Fang-Cheng Chen ,  Wen-Chih Chiou ,  Ping-Jung Wu

IPC: H01L25/16 ,  G02B6/43 ,  G02B6/12 ,  G02B6/122 ,  G02B6/42 ,  H01L23/00 ,  H01L23/522 ,  H01L23/28

Abstract: A package structure including a plurality of first dies and an insulating encapsulant is provided. The plurality of first dies each include a first waveguide layer having a first waveguide path of a bent pattern, wherein the first waveguide layers of the plurality of first dies are optically coupled to each other to form an optical route. The insulating encapsulant encapsulates the plurality of first dies.

公开(公告)号：US11152249B2

公开(公告)日：2021-10-19

申请号：US16874677

申请日：2020-05-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jih-Jse Lin ,  Ryan Chia-Jen Chen ,  Fang-Cheng Chen ,  Ming-Ching Chang

IPC: H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L21/764 ,  H01L21/3065 ,  H01L29/78 ,  H01L21/311 ,  H01L29/165

Abstract: A method of forming a FinFET device includes following steps. A substrate is provided with a plurality of fins thereon, an isolation layer thereon covering lower portions of the fins, a plurality of dummy strips across the fins, and a dielectric layer aside the dummy strips. The dummy strips is cut to form a trench in the dielectric layer. A first insulating structure is formed in the trench, wherein first and second groups of the dummy strips are beside the first insulating structure. A dummy strip is removed from the first group of the dummy strips to form a first opening that exposes portions of the fins under the dummy strip. The portions of the fins are removed to form a plurality of second openings below the first opening, wherein each second opening has a middle-wide profile. A second insulating structure is formed in the first and second openings.

公开(公告)号：US20190229010A1

公开(公告)日：2019-07-25

申请号：US15874889

申请日：2018-01-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jih-Jse Lin ,  Ryan Chia-Jen Chen ,  Fang-Cheng Chen ,  Ming-Ching Chang

IPC: H01L21/762 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/764 ,  H01L27/088

Abstract: FinFET devices and methods of forming the same are disclosed. One of the FinFET devices includes first fins, second fins, a first gate strip, a second gate strip and a comb-like insulating structure. The first and second fins are disposed on a substrate. The first gate strip is disposed across the first fins. The second gate strip is disposed across the second fins. The comb-like insulating structure is disposed between the first gate strip and the second gate strip and has a plurality of comb tooth parts. In some embodiments, each of the comb tooth parts has a middle-wide profile.