公开(公告)号：US10170429B2

公开(公告)日：2019-01-01

申请号：US15431802

申请日：2017-02-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Heng-Chi Huang ,  Chien-Chen Li ,  Kuo-Lung Li ,  Cheng-Liang Cho ,  Che-Jung Chu ,  Kuo-Chio Liu

IPC: H01L25/065 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L21/68 ,  H01L21/683

Abstract: Package structures and methods for forming the same are provided. A package structure includes a package component including a first bump. The package structure also includes an intermetallic compound (IMC) on the first bump. The package structure further includes an integrated circuit die including a second bump on the IMC. The integrated circuit die and the package component are bonded together through the first bump and the second bump. The IMC extends from the first bump to the second bump to provide good physical and electrical connections between the first bump and the second bump.

公开(公告)号：US10811377B2

公开(公告)日：2020-10-20

申请号：US16194927

申请日：2018-11-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hung Chen ,  Yu-Nu Hsu ,  Chun-Chen Liu ,  Heng-Chi Huang ,  Chien-Chen Li ,  Shih-Yen Chen ,  Cheng-Nan Hsieh ,  Kuo-Chio Liu ,  Chen-Shien Chen ,  Chin-Yu Ku ,  Te-Hsun Pang ,  Yuan-Feng Wu ,  Sen-Chi Chiang

IPC: H01L23/20 ,  H01L23/498 ,  H01L23/00

Abstract: A package structure is provided. The package structure includes a first bump structure formed over a substrate, a solder joint formed over the first bump structure and a second bump structure formed over the solder joint. The first bump structure includes a first pillar layer formed over the substrate and a first barrier layer formed over the first pillar layer. The first barrier layer has a first protruding portion which extends away from a sidewall surface of the first pillar layer, and a distance between the sidewall surface of the first pillar layer and a sidewall surface of the first barrier layer is in a range from about 0.5 μm to about 3 μm. The second bump structure includes a second barrier layer formed over the solder joint and a second pillar layer formed over the second barrier layer, wherein the second barrier layer has a second protruding portion which extends away from a sidewall surface of the second pillar layer.