公开(公告)号：US20240113164A1

公开(公告)日：2024-04-04

申请号：US18151792

申请日：2023-01-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Heng-Chia Su ,  Li-Fong Lin ,  Zhen-Cheng Wu ,  Chi On Chui

IPC: H01L29/06 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L21/76224 ,  H01L21/76843 ,  H01L21/823412 ,  H01L21/823481 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/78696

Abstract: A process for converting a portion of a dielectric fill material into a hard mask includes a nitrogen treatment or nitrogen plasma to convert a portion of the dielectric fill material into a nitrogen-like layer for serving as a hard mask to form an edge area of a device die by an etching process. After forming the edge area, another dielectric fill material is provided in the edge area. In the completed device, a gate cut area can have a gradient of nitrogen concentration at an upper portion of the gate cut dielectric of the gate cut area.