公开(公告)号：US20230230839A1

公开(公告)日：2023-07-20

申请号：US18126861

申请日：2023-03-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Jung HUANG ,  Li-Hsin CHU ,  Po-Feng TSAI ,  Henry PENG ,  Kuang Huan HSU ,  Tsung Wei CHEN ,  Yung-Lin HSU

IPC: H01L21/265 ,  C23C14/54 ,  C23C14/48 ,  H01L21/66

CPC classification number: H01L21/26586 ,  C23C14/54 ,  C23C14/48 ,  H01L22/14

Abstract: The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.