公开(公告)号：US20230395595A1

公开(公告)日：2023-12-07

申请号：US18232736

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hsiang HUNG ,  Li-Hsin CHU ,  Chia-Ping LAI ,  Chung-Chuan TSENG

IPC: H01L27/07 ,  H01L23/532 ,  H01L27/01 ,  H01L27/06

CPC classification number: H01L27/0794 ,  H01L23/5329 ,  H01L28/60 ,  H01L28/20 ,  H01L27/016 ,  H01L27/0682

Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.

公开(公告)号：US20180138220A1

公开(公告)日：2018-05-17

申请号：US15870940

申请日：2018-01-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Ying WU ,  Li-Hsin CHU ,  Chung-Chuan TSENG ,  Chia-Wei LIU

IPC: H01L27/146

Abstract: An infrared image sensor component includes a semiconductor substrate, an active pixel region disposed on the semiconductor substrate for receiving an infrared ray, and a transistor coupled to the active pixel region. The transistor includes a gate and a source/drain stressor disposed adjacent to the gate. The active pixel region includes a III-V compound material.

公开(公告)号：US20160172392A1

公开(公告)日：2016-06-16

申请号：US15053829

申请日：2016-02-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Chuan TSENG ,  Chia-Wei LIU ,  Li-Hsin CHU ,  Yu-Hsiang TSAI

IPC: H01L27/146 ,  H01L31/112

CPC classification number: H01L27/1464 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/1126

Abstract: A backside illuminated image sensor device structure and methods for forming the same are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Abstract translation: 提供背面照明的图像传感器装置结构及其形成方法。 制造背面照明图像传感器装置结构的方法包括提供衬底并在衬底上形成多晶硅层。 该方法还包括在多晶硅层上形成缓冲层，并在缓冲层上形成蚀刻停止层。 所述方法还包括在所述蚀刻停止层上形成硬掩模层并且对所述硬掩模层进行构图以在所述硬掩模层中形成开口。 该方法还包括通过打开硬掩模层来执行注入工艺，以在衬底中形成掺杂区域并通过第一去除工艺去除硬掩模层。 该方法还包括通过第二去除工艺去除蚀刻停止层，并通过第三去除工艺去除缓冲层。

公开(公告)号：US20220384503A1

公开(公告)日：2022-12-01

申请号：US17884279

申请日：2022-08-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Ying WU ,  Li-Hsin CHU ,  Chung-Chuan TSENG ,  Chia-Wei LIU

IPC: H01L27/146

Abstract: A method includes following steps. A first III-V compound layer is epitaxially grown over a semiconductive substrate. The first III-V compound layer has an energy gap in a gradient distribution. A source/drain contact is formed over the first III-V compound layer. A gate structure is formed over the first III-V compound layer.

公开(公告)号：US20170207113A1

公开(公告)日：2017-07-20

申请号：US15477869

申请日：2017-04-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Hsiang TSAI ,  Chung-Chuan TSENG ,  Chia-Wei LIU ,  Li-Hsin CHU

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/324

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.

公开(公告)号：US20250151376A1

公开(公告)日：2025-05-08

申请号：US18983184

申请日：2024-12-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hsiang HUNG ,  Li-Hsin CHU ,  Chia-Ping LAI ,  Chung-Chuan TSENG

IPC: H10D84/00 ,  H01L23/532 ,  H10D1/47 ,  H10D1/68 ,  H10D86/85

Abstract: A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.

公开(公告)号：US20240055449A1

公开(公告)日：2024-02-15

申请号：US18232345

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hsiang HUNG ,  Chung-Chuan TSENG ,  Li-Hsin CHU ,  Chia-Ping LAI

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/1463 ,  H01L27/14689 ,  H01L27/14643

Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.

公开(公告)号：US20200052018A1

公开(公告)日：2020-02-13

申请号：US16659405

申请日：2019-10-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Ying WU ,  Li-Hsin CHU ,  Chung-Chuan TSENG ,  Chia-Wei LIU

IPC: H01L27/146

Abstract: A method includes epitaxially growing a first III-V compound layer over a semiconductive substrate. A second III-V compound layer is epitaxially grown over the first III-V compound layer. A source/drain contact is formed over the second III-V compound layer. A gate structure is formed over the second III-V compound layer. A pattern is formed shielding the gate structure and the source/drain contact, in which a portion of the second III-V compound layer is free from coverage by the pattern.

公开(公告)号：US20170141148A1

公开(公告)日：2017-05-18

申请号：US15051600

申请日：2016-02-23

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chien-Ying WU ,  Li-Hsin CHU ,  Chung-Chuan TSENG ,  Chia-Wei LIU

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14609 ,  H01L27/14649 ,  H01L27/14689 ,  H01L27/14694

Abstract: An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.

公开(公告)号：US20170084479A1

公开(公告)日：2017-03-23

申请号：US14857435

申请日：2015-09-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Hsiang TSAI ,  Chung-Chuan TSENG ,  Chia-Wei LIU ,  Li-Hsin CHU

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/324

CPC classification number: H01L21/76254 ,  H01L21/324 ,  H01L21/76243 ,  H01L21/76251 ,  H01L21/7813 ,  H01L21/84 ,  H01L29/0623

Abstract: A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.