公开(公告)号：US20190103277A1

公开(公告)日：2019-04-04

申请号：US15952714

申请日：2018-04-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa LUAN ,  Huicheng CHANG ,  Cheng-Po CHAU ,  Wen-Yu KU ,  Yi-Fan CHEN ,  Chun-Yen PENG

IPC: H01L21/28 ,  H01L21/225 ,  H01L29/66 ,  H01L29/51 ,  H01L29/78

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.