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公开(公告)号:US20230386834A1
公开(公告)日:2023-11-30
申请号:US18447869
申请日:2023-08-10
发明人: Chih-Kai YANG , Yu-Tien SHEN , Hsiang-Ming CHANG , Chun-Yen CHANG , Ya-Hui CHANG , Wei-Ting CHIEN , Chia-Cheng CHEN , Liang-Yin CHEN
IPC分类号: H01L21/027 , H01L21/311 , G03F7/00 , H01L21/3115 , H01L21/768
CPC分类号: H01L21/0273 , H01L21/31144 , G03F7/70058 , H01L21/31155 , H01L21/76877
摘要: A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.
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公开(公告)号:US20220102139A1
公开(公告)日:2022-03-31
申请号:US17353400
申请日:2021-06-21
发明人: Chih-Kai YANG , Yu-Tien SHEN , Hsiang-Ming CHANG , Chun-Yen CHANG , Ya-Hui CHANG , Wei-Ting CHIEN , Chia-Cheng CHEN , Liang-Yin CHEN
IPC分类号: H01L21/027 , H01L21/311 , H01L21/768 , H01L21/3115 , G03F7/20
摘要: A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.
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