公开(公告)号：US20230386834A1

公开(公告)日：2023-11-30

申请号：US18447869

申请日：2023-08-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Kai YANG ,  Yu-Tien SHEN ,  Hsiang-Ming CHANG ,  Chun-Yen CHANG ,  Ya-Hui CHANG ,  Wei-Ting CHIEN ,  Chia-Cheng CHEN ,  Liang-Yin CHEN

IPC分类号： H01L21/027 ,  H01L21/311 ,  G03F7/00 ,  H01L21/3115 ,  H01L21/768

CPC分类号： H01L21/0273 ,  H01L21/31144 ,  G03F7/70058 ,  H01L21/31155 ,  H01L21/76877

摘要： A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.

公开(公告)号：US20200266299A1

公开(公告)日：2020-08-20

申请号：US16869819

申请日：2020-05-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Cheng CHEN ,  Su-Hao LIU ,  Kuo-Ju CHEN ,  Liang-Yin CHEN

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L27/088 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L21/223

摘要： A method for forming a semiconductor device structure is provided. The method includes forming an epitaxial structure over a semiconductor substrate. The method also includes generating and applying plasma on an entire exposed surface of the epitaxial structure to form a modified region in the epitaxial structure. The plasma is directly applied on the source/drain structure without being filtered out, and the plasma includes ions with different charges. The method further includes forming a metal layer on the modified region and heating the metal layer and the modified region to form a metal-semiconductor compound region.

公开(公告)号：US20220102139A1

公开(公告)日：2022-03-31

申请号：US17353400

申请日：2021-06-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Kai YANG ,  Yu-Tien SHEN ,  Hsiang-Ming CHANG ,  Chun-Yen CHANG ,  Ya-Hui CHANG ,  Wei-Ting CHIEN ,  Chia-Cheng CHEN ,  Liang-Yin CHEN

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/768 ,  H01L21/3115 ,  G03F7/20

摘要： A semiconductor process system includes an ion source configured to bombard with a photoresist structure on a wafer. The semiconductor process system reduces a width of the photoresist structure by bombarding the photoresist structure with ions in multiple distinct ion bombardment steps having different characteristics.

公开(公告)号：US20210305092A1

公开(公告)日：2021-09-30

申请号：US16997616

申请日：2020-08-19

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chia-Cheng CHEN ,  Huicheng CHANG ,  Fu-Ming HUANG ,  Kei-Wei CHEN ,  Liang-Yin CHEN ,  Tang-Kuei CHANG ,  Yee-Chia YEO ,  Wei-Wei LIANG ,  Ji CUI

IPC分类号： H01L21/768 ,  H01L21/321 ,  H01L23/532 ,  H01L23/522 ,  H01L29/78 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535

摘要： The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.

公开(公告)号：US20190157456A1

公开(公告)日：2019-05-23

申请号：US16038866

申请日：2018-07-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Cheng CHEN ,  Su-Hao LIU ,  Kuo-Ju CHEN ,  Liang-Yin CHEN

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L27/088

摘要： Structures and formation methods of a semiconductor device structure are provided. The method includes forming a fin structure over a semiconductor substrate and forming a gate stack over the fin structure. The method also includes forming an epitaxial structure over the fin structure. The method further includes forming a dielectric layer over the epitaxial structure and forming an opening in the dielectric layer to expose the epitaxial structure. In addition, the method includes forming a modified region in the epitaxial structure. The modified region has lower crystallinity than an inner portion of the epitaxial structure and extends along an entirety of an exposed surface of the epitaxial structure. The method also includes forming a semiconductor-metal compound region on the epitaxial structure. All or some of the modified region is transformed into the semiconductor-metal compound region.

公开(公告)号：US20190131399A1

公开(公告)日：2019-05-02

申请号：US15797703

申请日：2017-10-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Su-Hao LIU ,  Huicheng CHANG ,  Chia-Cheng CHEN ,  Liang-Yin CHEN ,  Kuo-Ju CHEN ,  Chun-Hung WU ,  Chang-Miao Liu ,  Huai-Tei Yang ,  Lun-Kuang Tan ,  Wei-Ming You

IPC分类号： H01L29/08 ,  H01L29/167 ,  H01L29/78 ,  H01L21/265 ,  H01L21/285 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/0847 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/26513 ,  H01L21/28518 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.

公开(公告)号：US20210096473A1

公开(公告)日：2021-04-01

申请号：US16587710

申请日：2019-09-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Ru-Gun LIU ,  Huicheng CHANG ,  Chia-Cheng CHEN ,  Jyu-Horng SHIEH ,  Liang-Yin CHEN ,  Shu-Huei SUEN ,  Wei-Liang LIN ,  Ya Hui CHANG ,  Yi-Nien SU ,  Yung-Sung YEN ,  Chia-Fong CHANG ,  Ya-Wen YEH ,  Yu-Tien SHEN

IPC分类号： G03F7/20 ,  H01L21/027

摘要： In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.

公开(公告)号：US20200343242A1

公开(公告)日：2020-10-29

申请号：US16924541

申请日：2020-07-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Cheng CHEN ,  Chia-Ling CHAN ,  Liang-Yin CHEN ,  Huicheng CHANG

IPC分类号： H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

摘要： A method for forming a semiconductor structure includes forming a fin structure over a substrate. The method also includes forming a gate structure across the fin structure. The method also includes depositing a dopant source layer over the gate structure. The method also includes driving dopants of the dopant source layer into the fin structure. The method also includes removing the dopant source layer. The method also includes annealing the dopants in the fin structure to form a doped region. The method also includes etching the doped region and the fin structure below the doped region to form a recess. The method also includes growing a source/drain feature in the recess.

公开(公告)号：US20190165099A1

公开(公告)日：2019-05-30

申请号：US15825533

申请日：2017-11-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Cheng CHEN ,  Liang-Yin CHEN

IPC分类号： H01L29/08 ,  H01L29/78 ,  H01L29/45 ,  H01L21/02 ,  H01L21/223 ,  H01L21/324 ,  H01L29/66

摘要： Embodiments disclosed herein relate generally to forming a source/drain region with a high surface dopant concentration at an upper surface of the source/drain region, to which a conductive feature may be formed. In an embodiment, a structure includes an active area on a substrate, a dielectric layer over the active area, and a conductive feature through the dielectric layer to the active area. The active area includes a source/drain region. The source/drain region includes a surface dopant region at an upper surface of the source/drain region, and includes a remainder portion of the source/drain region having a source/drain dopant concentration. The surface dopant region includes a peak dopant concentration proximate the upper surface of the source/drain region. The peak dopant concentration is at least an order of magnitude greater than the source/drain dopant concentration. The conductive feature contacts the source/drain region at the upper surface of the source/drain region.

公开(公告)号：US20190027473A1

公开(公告)日：2019-01-24

申请号：US15652719

申请日：2017-07-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Cheng CHEN ,  Chia-Ling CHAN ,  Liang-Yin CHEN ,  Huicheng CHANG

IPC分类号： H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66

摘要： A semiconductor device and a method for forming the same are provided. The semiconductor device includes a gate structure and a source/drain feature. The gate structure is positioned over a fin structure. The source/drain feature is positioned adjacent to the gate structure. A portion of the source/drain feature embedded in the fin structure has an upper sidewall portion adjacent to a top surface of the fin structure and a lower sidewall portion below the upper sidewall portion. A first curve radius of the upper sidewall portion is different from a second curve radius of the lower sidewall portion in a cross-sectional view substantially along the longitudinal direction of the fin structure.