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    Semiconductor Packages and Methods of Forming
    1.
    发明申请
    Semiconductor Packages and Methods of Forming 有权

    公开(公告)号：US20250118609A1

    公开(公告)日：2025-04-10

    申请号：US18410301

    申请日：2024-01-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Hsin Chang ,  Po-Han Wang ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

    IPC: H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L23/522 ,  H01L25/00 ,  H01L25/065

    Abstract: A method of forming a semiconductor package includes: surrounding a die with a molding material; and forming a redistribution structure (RDS) over the molding material and electrically coupled to the die, which includes: depositing a first dielectric layer over the molding material; patterning the first dielectric layer to form first openings in the first dielectric layer; performing a first descum process to clean the first openings; after performing the first descum process, forming a first redistribution layer (RDL) on the first dielectric layer; depositing a second dielectric layer over the molding material; patterning the second dielectric layer to form second openings in the second dielectric layer; performing a second descum process to clean the second openings, where the first and second descum processes are performed under different process conditions; and after performing the second descum process, forming a second RDL on the second dielectric layer.

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