公开(公告)号：US11942375B2

公开(公告)日：2024-03-26

申请号：US17404443

申请日：2021-08-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Hui Hsu ,  Po-Nien Chen ,  Yi-Hsuan Chung ,  Bo-Shiuan Shie ,  Chih-Yung Lin

IPC: H01L21/8238 ,  H01L21/02 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0924 ,  H01L27/0928 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/823892 ,  H01L29/7848

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.

公开(公告)号：US11094597B2

公开(公告)日：2021-08-17

申请号：US16526692

申请日：2019-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Hui Hsu ,  Po-Nien Chen ,  Yi-Hsuan Chung ,  Bo-Shiuan Shie ,  Chih-Yung Lin

IPC: H01L29/49 ,  H01L21/84 ,  H01L21/324 ,  H01L29/78 ,  H01L29/51 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/02 ,  H01L27/092

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.

公开(公告)号：US20210375697A1

公开(公告)日：2021-12-02

申请号：US17404443

申请日：2021-08-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsing-Hui Hsu ,  Po-Nien Chen ,  Yi-Hsuan Chung ,  Bo-Shiuan Shie ,  Chih-Yung Lin

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L27/092

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate. The second semiconductor fin is wider than the first semiconductor fin. The method also includes forming a gate stack over the semiconductor substrate, and the gate stack extends across the first semiconductor fin and the second semiconductor fin. The method further includes forming a first source/drain structure on the first semiconductor fin, and the first source/drain structure is p-type doped. In addition, the method includes forming a second source/drain structure on the second semiconductor fin, and the second source/drain structure is n-type doped.