公开(公告)号：US11862654B2

公开(公告)日：2024-01-02

申请号：US17150014

申请日：2021-01-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chin-Chia Kuo ,  Wen-Hau Wu ,  Hua-Mao Chen ,  Chih-Kung Chang

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/14687 ,  H01L27/14643

Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

公开(公告)号：US20220231066A1

公开(公告)日：2022-07-21

申请号：US17150014

申请日：2021-01-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chin-Chia Kuo ,  Wen-Hau Wu ,  Hua-Mao Chen ,  Chih-Kung Chang

IPC: H01L27/146

Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).