公开(公告)号：US12154924B2

公开(公告)日：2024-11-26

申请号：US17236311

申请日：2021-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L31/0216 ,  H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US11329083B2

公开(公告)日：2022-05-10

申请号：US16227138

申请日：2018-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hau Wu ,  Chun-Hao Chuang ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Cheng Yu Huang

IPC: H01L27/146

Abstract: An image sensor package is provided. The image sensor package comprises a package substrate, and an image sensor chip arranged over the package substrate. The integrated circuit device further comprises a protection layer overlying the image sensor chip having a planar top surface and a bottom surface lining and contacting structures under the protection layer, and an on-wafer shield structure spaced around a periphery of the image sensor chip. The height of the image sensor package can be reduced since a discrete cover glass or an infrared filter and corresponding intervening materials are no longer needed since being replaced by the build in protection layer. The size of the image sensor package can be reduced since a discrete light shield and corresponding intervening materials are no longer needed since being replaced by the build in on wafer light shield structure.

公开(公告)号：US11158662B2

公开(公告)日：2021-10-26

申请号：US16695575

申请日：2019-11-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.

公开(公告)号：US20210183922A1

公开(公告)日：2021-06-17

申请号：US17019502

申请日：2020-09-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang

IPC: H01L27/146 ,  G01J1/44 ,  G01J1/02

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first phase detection autofocus (PDAF) photodetector and a second PDAF photodetector in a substrate. A first electromagnetic radiation (EMR) diffuser is disposed along a back-side of the substrate and within a perimeter of the first PDAF photodetector. The first EMR diffuser is spaced a first distance from a first side of the first PDAF photodetector and a second distance less than the first distance from a second side of the first PDAF photodetector. A second EMR diffuser is disposed along the back-side of the substrate and within a perimeter of the second PDAF photodetector. The second EMR diffuser is spaced a third distance from a first side of the second PDAF photodetector and a fourth distance less than the third distance from a second side of the second PDAF photodetector.

公开(公告)号：US10991739B2

公开(公告)日：2021-04-27

申请号：US16837312

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US20200227461A1

公开(公告)日：2020-07-16

申请号：US16837351

申请日：2020-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US20200098808A1

公开(公告)日：2020-03-26

申请号：US16227138

申请日：2018-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hau Wu ,  Chun-Hao Chuang ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Cheng Yu Huang

IPC: H01L27/146

Abstract: An image sensor package is provided. The image sensor package comprises a package substrate, and an image sensor chip arranged over the package substrate. The integrated circuit device further comprises a protection layer overlying the image sensor chip having a planar top surface and a bottom surface lining and contacting structures under the protection layer, and an on-wafer shield structure spaced around a periphery of the image sensor chip. The height of the image sensor package can be reduced since a discrete cover glass or an infrared filter and corresponding intervening materials are no longer needed since being replaced by the build in protection layer. The size of the image sensor package can be reduced since a discrete light shield and corresponding intervening materials are no longer needed since being replaced by the build in on wafer light shield structure.

公开(公告)号：US09609239B2

公开(公告)日：2017-03-28

申请号：US14831820

申请日：2015-08-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Yuichiro Yamashita

IPC: H04N5/33 ,  H04N5/225

CPC classification number: H04N5/332 ,  H04N5/2254

Abstract: An image sensor includes a substrate, a plurality of visible light photosensitive devices, an infrared photosensitive device, a plurality of color filters, an infrared band-pass filter, a micro-lens layer and an infrared filter layer. The plurality of visible light photosensitive devices and the infrared photosensitive device are disposed in the substrate, wherein the plurality of visible light photosensitive devices and the infrared photosensitive device are arranged in an array. The plurality of color filters are respectively disposed to cover the plurality of visible light photosensitive device. In addition, the infrared band-pass filter disposed to cover the infrared photosensitive device. Furthermore, the micro-lens layer is disposed on the plurality of color filters and the infrared band-pass filter. The infrared filter layer is disposed to cover the plurality of visible light photosensitive device.

公开(公告)号：US12148783B2

公开(公告)日：2024-11-19

申请号：US17216955

申请日：2021-03-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Cheng Yu Huang ,  Chun-Hao Chuang ,  Wen-Hau Wu ,  Wei-Chieh Chiang ,  Wen-Chien Yu ,  Chih-Kung Chang

IPC: H01L27/146 ,  G02B5/20

Abstract: Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.

公开(公告)号：US12062678B2

公开(公告)日：2024-08-13

申请号：US17372866

申请日：2021-07-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Wei-Chieh Chiang ,  Keng-Yu Chou ,  Tzu-Hsuan Hsu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.