公开(公告)号：US20240304535A1

公开(公告)日：2024-09-12

申请号：US18334695

申请日：2023-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Shien Chen ,  Ting Hao Kuo ,  Hui-Chun Chiang ,  Yu-Chia Lai

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L21/76829 ,  H01L24/06 ,  H01L2224/05025

Abstract: A device includes: a first integrated circuit (IC) die; a first dielectric material around first sidewalls of the first IC die; a second IC die over and electrically coupled to the first IC die; and a second dielectric material over the first dielectric material and around second sidewalls of the second IC die, where in a top view, the second sidewalls of the second IC die are disposed within, and are spaced apart from, the first sidewalls of the first IC die.