公开(公告)号：US20220254680A1

公开(公告)日：2022-08-11

申请号：US17732695

申请日：2022-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ping Tung ,  Jen-Hung Wang ,  Shing-Chyang Pan

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

Abstract: A semiconductor device includes a substrate, a first conductive feature over a portion of the substrate, and an etch stop layer over the substrate and the first conductive feature. The etch stop layer includes a silicon-containing dielectric (SCD) layer and a metal-containing dielectric (MCD) layer over the SCD layer. The semiconductor device further includes a dielectric layer over the etch stop layer, and a second conductive feature in the dielectric layer. The second conductive feature penetrates the etch stop layer and electrically connects to the first conductive feature.

公开(公告)号：US11282742B2

公开(公告)日：2022-03-22

申请号：US16655961

申请日：2019-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Cheng Shih ,  Tze-Liang Lee ,  Jen-Hung Wang ,  Yu-Kai Lin ,  Su-Jen Sung

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L21/02

Abstract: A semiconductor device structure is provided. The structure includes a conductive feature formed in an insulating layer. The structure also includes a first metal-containing dielectric layer formed over the insulating layer and covering the top surface of the conductive feature. The structure further includes a silicon-containing dielectric layer formed over the first metal-containing dielectric layer. In addition, the structure includes a second metal-containing dielectric layer formed over the silicon-containing dielectric layer. The second metal-containing dielectric layer includes a material that is different than the material of the first metal-containing dielectric layer.