公开(公告)号：US20210280460A1

公开(公告)日：2021-09-09

申请号：US17316063

申请日：2021-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ping Tung ,  Yu-Kai Lin ,  Jen Hung Wang ,  Shing-Chyang Pan

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311

Abstract: A semiconductor structure includes a conductive feature, a first metal-based etch-stop layer over the underlying structure, a metal-free etch-stop layer over the first metal-based etch-stop layer, a second metal-based etch-stop layer over the metal-free etch-stop layer, an interlayer dielectric layer over the second metal-based etch-stop layer, and an interconnect structure extending through the first metal-based etch-stop layer, metal-free etch-stop layer, and the second metal-based etch-stop layer, wherein a bottom portion of the conductive interconnect structure directly contacts the conductive feature. The first metal-based etch-stop layer may include a first metallic component having one of aluminum, tantalum, titanium, or hafnium, and the second metal-based etch-stop layer may include a second metallic component the same as or different from the first metallic component. The first metal-based etch-stop layer and the second metal-based etch-stop layer may both be free of silicon.

公开(公告)号：US20230260832A1

公开(公告)日：2023-08-17

申请号：US17831884

申请日：2022-06-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kai Lin ,  Po-Cheng Shih ,  Jr-Hung Li ,  Tze-Liang Lee

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76829 ,  H01L21/0228 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/535 ,  H01L23/53266

Abstract: Semiconductor devices and methods of manufacture are presented herein in which a etch stop layer is selectively deposited over a conductive contact. A dielectric layer is formed over the etch stop layer and an opening is formed through the dielectric layer and the etch stop layer to expose the conductive contact. Conductive material is then deposited to fill the opening.

公开(公告)号：US11004734B2

公开(公告)日：2021-05-11

申请号：US16672879

申请日：2019-11-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ping Tung ,  Yu-Kai Lin ,  Jen Hung Wang ,  Shing-Chyang Pan

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311

Abstract: A semiconductor structure includes a conductive feature, a first metal-based etch-stop layer over the underlying structure, a metal-free etch-stop layer over the first metal-based etch-stop layer, a second metal-based etch-stop layer over the metal-free etch-stop layer, an interlayer dielectric layer over the second metal-based etch-stop layer, and an interconnect structure extending through the first metal-based etch-stop layer, metal-free etch-stop layer, and the second metal-based etch-stop layer, wherein a bottom portion of the conductive interconnect structure directly contacts the conductive feature. The first metal-based etch-stop layer may include a first metallic component having one of aluminum, tantalum, titanium, or hafnium, and the second metal-based etch-stop layer may include a second metallic component the same as or different from the first metallic component. The first metal-based etch-stop layer and the second metal-based etch-stop layer may both be free of silicon.

公开(公告)号：US20190333807A1

公开(公告)日：2019-10-31

申请号：US15964306

申请日：2018-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ping Tung ,  Yu-Kai Lin ,  Jen Hung Wang ,  Shing-Chyang Pan

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311

Abstract: A semiconductor structure includes a conductive feature, a first metal-based etch-stop layer over the underlying structure, a metal-free etch-stop layer over the first metal-based etch-stop layer, a second metal-based etch-stop layer over the metal-free etch-stop layer, an interlayer dielectric layer over the second metal-based etch-stop layer, and an interconnect structure extending through the first metal-based etch-stop layer, metal-free etch-stop layer, and the second metal-based etch-stop layer, wherein a bottom portion of the conductive interconnect structure directly contacts the conductive feature. The first metal-based etch-stop layer may include a first metallic component having one of aluminum, tantalum, titanium, or hafnium, and the second metal-based etch-stop layer may include a second metallic component the same as or different from the first metallic component. The first metal-based etch-stop layer and the second metal-based etch-stop layer may both be free of silicon.

公开(公告)号：US11769693B2

公开(公告)日：2023-09-26

申请号：US17316063

申请日：2021-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ping Tung ,  Yu-Kai Lin ,  Jen Hung Wang ,  Shing-Chyang Pan

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311

CPC classification number: H01L21/76832 ,  H01L21/31116 ,  H01L21/7684 ,  H01L23/5329 ,  H01L23/53223 ,  H01L23/53266

Abstract: A semiconductor structure includes a conductive feature, a first metal-based etch-stop layer over the underlying structure, a metal-free etch-stop layer over the first metal-based etch-stop layer, a second metal-based etch-stop layer over the metal-free etch-stop layer, an interlayer dielectric layer over the second metal-based etch-stop layer, and an interconnect structure extending through the first metal-based etch-stop layer, metal-free etch-stop layer, and the second metal-based etch-stop layer, wherein a bottom portion of the conductive interconnect structure directly contacts the conductive feature. The first metal-based etch-stop layer may include a first metallic component having one of aluminum, tantalum, titanium, or hafnium, and the second metal-based etch-stop layer may include a second metallic component the same as or different from the first metallic component. The first metal-based etch-stop layer and the second metal-based etch-stop layer may both be free of silicon.

公开(公告)号：US10468297B1

公开(公告)日：2019-11-05

申请号：US15964306

申请日：2018-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ping Tung ,  Yu-Kai Lin ,  Jen Hung Wang ,  Shing-Chyang Pan

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311

Abstract: A semiconductor structure includes a conductive feature, a first metal-based etch-stop layer over the underlying structure, a metal-free etch-stop layer over the first metal-based etch-stop layer, a second metal-based etch-stop layer over the metal-free etch-stop layer, an interlayer dielectric layer over the second metal-based etch-stop layer, and an interconnect structure extending through the first metal-based etch-stop layer, metal-free etch-stop layer, and the second metal-based etch-stop layer, wherein a bottom portion of the conductive interconnect structure directly contacts the conductive feature. The first metal-based etch-stop layer may include a first metallic component having one of aluminum, tantalum, titanium, or hafnium, and the second metal-based etch-stop layer may include a second metallic component the same as or different from the first metallic component. The first metal-based etch-stop layer and the second metal-based etch-stop layer may both be free of silicon.

公开(公告)号：US11282742B2

公开(公告)日：2022-03-22

申请号：US16655961

申请日：2019-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Cheng Shih ,  Tze-Liang Lee ,  Jen-Hung Wang ,  Yu-Kai Lin ,  Su-Jen Sung

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L21/02

Abstract: A semiconductor device structure is provided. The structure includes a conductive feature formed in an insulating layer. The structure also includes a first metal-containing dielectric layer formed over the insulating layer and covering the top surface of the conductive feature. The structure further includes a silicon-containing dielectric layer formed over the first metal-containing dielectric layer. In addition, the structure includes a second metal-containing dielectric layer formed over the silicon-containing dielectric layer. The second metal-containing dielectric layer includes a material that is different than the material of the first metal-containing dielectric layer.

公开(公告)号：US20200066581A1

公开(公告)日：2020-02-27

申请号：US16672879

申请日：2019-11-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Szu-Ping Tung ,  Yu-Kai Lin ,  Jen Hung Wang ,  Shing-Chyang Pan

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311

Abstract: A semiconductor structure includes a conductive feature, a first metal-based etch-stop layer over the underlying structure, a metal-free etch-stop layer over the first metal-based etch-stop layer, a second metal-based etch-stop layer over the metal-free etch-stop layer, an interlayer dielectric layer over the second metal-based etch-stop layer, and an interconnect structure extending through the first metal-based etch-stop layer, metal-free etch-stop layer, and the second metal-based etch-stop layer, wherein a bottom portion of the conductive interconnect structure directly contacts the conductive feature. The first metal-based etch-stop layer may include a first metallic component having one of aluminum, tantalum, titanium, or hafnium, and the second metal-based etch-stop layer may include a second metallic component the same as or different from the first metallic component. The first metal-based etch-stop layer and the second metal-based etch-stop layer may both be free of silicon.