公开(公告)号：US20190355694A1

公开(公告)日：2019-11-21

申请号：US16524146

申请日：2019-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Wan ,  Ching-Hua Hsieh ,  Chung-Hao Tsai ,  Chuei-Tang Wang ,  Chao-Wen Shih ,  Han-Ping Pu ,  Chien-Ling Hwang ,  Pei-Hsuan Lee ,  Tzu-Chun Tang ,  Yu-Ting Chiu ,  Jui-Chang Kuo

IPC: H01L23/00 ,  H01L23/66 ,  H01L21/768 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L25/065 ,  H01L21/56 ,  H01L25/00

Abstract: A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A dielectric layer having a core layer formed thereon is provided. The core layer includes a plurality of cavities penetrating through the core layer. The dielectric layer and the core layer are attached onto the package array such that the core layer is located between the dielectric layer and the package array. A plurality of first conductive patches is formed on the dielectric layer above the cavities.

公开(公告)号：US20200044306A1

公开(公告)日：2020-02-06

申请号：US16379819

申请日：2019-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Hsuan Lee ,  Ching-Hua Hsieh ,  Chien-Ling Hwang ,  Yu-Ting Chiu ,  Jui-Chang Kuo

IPC: H01Q1/22 ,  H01L23/00 ,  H01L21/48 ,  H01L23/66 ,  H01Q1/40

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a chip package, a core dielectric layer disposed on the chip package, and an antenna pattern disposed on the core dielectric layer opposite to the chip package. The chip package includes a semiconductor chip, an insulating encapsulation encapsulating the semiconductor chip, and a redistribution structure electrically coupled to the semiconductor chip. The redistribution structure includes a first circuit pattern located at an outermost side of the chip package, and a patterned dielectric layer disposed between the first circuit pattern and the insulating encapsulation. The core dielectric layer is in contact with the first circuit pattern. The core dielectric layer and the patterned dielectric layer are of different materials. The antenna pattern is electrically coupled to the chip package.

公开(公告)号：US11282810B2

公开(公告)日：2022-03-22

申请号：US16923115

申请日：2020-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Wan ,  Ching-Hua Hsieh ,  Chung-Hao Tsai ,  Chuei-Tang Wang ,  Chao-Wen Shih ,  Han-Ping Pu ,  Chien-Ling Hwang ,  Pei-Hsuan Lee ,  Tzu-Chun Tang ,  Yu-Ting Chiu ,  Jui-Chang Kuo

IPC: H01L23/00 ,  H01L23/538 ,  H01L21/768 ,  H01L21/48 ,  H01L23/66 ,  H01L25/00 ,  H01L21/56 ,  H01L25/065 ,  H01L23/31 ,  H01L21/683 ,  H01L23/544

Abstract: A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A core layer and a dielectric layer are sequentially stacked over the package array. The core layer includes a plurality of cavities. A plurality of first conductive patches is formed on the dielectric layer above the cavities.

公开(公告)号：US11075439B2

公开(公告)日：2021-07-27

申请号：US16379819

申请日：2019-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Hsuan Lee ,  Ching-Hua Hsieh ,  Chien-Ling Hwang ,  Yu-Ting Chiu ,  Jui-Chang Kuo

IPC: H01L23/00 ,  H01Q1/22 ,  H01L21/48 ,  H01Q1/40 ,  H01L23/66

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a chip package, a core dielectric layer disposed on the chip package, and an antenna pattern disposed on the core dielectric layer opposite to the chip package. The chip package includes a semiconductor chip, an insulating encapsulation encapsulating the semiconductor chip, and a redistribution structure electrically coupled to the semiconductor chip. The redistribution structure includes a first circuit pattern located at an outermost side of the chip package, and a patterned dielectric layer disposed between the first circuit pattern and the insulating encapsulation. The core dielectric layer is in contact with the first circuit pattern. The core dielectric layer and the patterned dielectric layer are of different materials. The antenna pattern is electrically coupled to the chip package.

公开(公告)号：US20200335477A1

公开(公告)日：2020-10-22

申请号：US16923115

申请日：2020-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Wan ,  Ching-Hua Hsieh ,  Chung-Hao Tsai ,  Chuei-Tang Wang ,  Chao-Wen Shih ,  Han-Ping Pu ,  Chien-Ling Hwang ,  Pei-Hsuan Lee ,  Tzu-Chun Tang ,  Yu-Ting Chiu ,  Jui-Chang Kuo

IPC: H01L23/00 ,  H01L23/538 ,  H01L21/768 ,  H01L21/48 ,  H01L23/66 ,  H01L25/00 ,  H01L21/56 ,  H01L25/065 ,  H01L23/31 ,  H01L21/683

Abstract: A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A core layer and a dielectric layer are sequentially stacked over the package array. The core layer includes a plurality of cavities. A plurality of first conductive patches is formed on the dielectric layer above the cavities.

公开(公告)号：US10756052B2

公开(公告)日：2020-08-25

申请号：US16524146

申请日：2019-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Wan ,  Ching-Hua Hsieh ,  Chung-Hao Tsai ,  Chuei-Tang Wang ,  Chao-Wen Shih ,  Han-Ping Pu ,  Chien-Ling Hwang ,  Pei-Hsuan Lee ,  Tzu-Chun Tang ,  Yu-Ting Chiu ,  Jui-Chang Kuo

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/538 ,  H01L21/768 ,  H01L21/48 ,  H01L23/66 ,  H01L25/00 ,  H01L25/065 ,  H01L23/31 ,  H01L21/683 ,  H01L23/544

Abstract: A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A dielectric layer having a core layer formed thereon is provided. The core layer includes a plurality of cavities penetrating through the core layer. The dielectric layer and the core layer are attached onto the package array such that the core layer is located between the dielectric layer and the package array. A plurality of first conductive patches is formed on the dielectric layer above the cavities.

公开(公告)号：US10366966B1

公开(公告)日：2019-07-30

申请号：US15981929

申请日：2018-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Wan ,  Ching-Hua Hsieh ,  Chung-Hao Tsai ,  Chuei-Tang Wang ,  Chao-Wen Shih ,  Han-Ping Pu ,  Chien-Ling Hwang ,  Pei-Hsuan Lee ,  Tzu-Chun Tang ,  Yu-Ting Chiu ,  Jui-Chang Kuo

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/538 ,  H01L21/768 ,  H01L21/48 ,  H01L23/66 ,  H01L25/00 ,  H01L25/065 ,  H01L23/31

Abstract: A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A dielectric layer and a core material layer are sequentially formed on a first carrier. A portion of the core material layer is removed to form a core layer having a plurality of cavities. The first carrier, the dielectric layer, and the core layer are attached onto the package array such that the core layer is located between the dielectric layer and the package array. The first carrier is removed from the dielectric layer. A plurality of first conductive patches is formed on the dielectric layer above the cavities.