公开(公告)号：US20190139917A1

公开(公告)日：2019-05-09

申请号：US15841336

申请日：2017-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US11152319B2

公开(公告)日：2021-10-19

申请号：US16871032

申请日：2020-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/52 ,  H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US11101233B1

公开(公告)日：2021-08-24

申请号：US16868909

申请日：2020-05-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-En Yen ,  Chin-Wei Kang ,  Kai-Jun Zhan ,  Wen-Hsiung Lu ,  Cheng-Jen Lin ,  Ming-Da Cheng ,  Mirng-Ji Lii

IPC: H01L21/48 ,  H01L23/552 ,  H01L23/00

Abstract: A method for forming a semiconductor device is provided. The method includes providing a substrate. The method includes forming a mask layer over a surface of the substrate. The mask layer has an opening over a portion of the surface. The method includes depositing a conductive layer over the surface and the mask layer. The method includes removing the mask layer and the conductive layer over the mask layer. The conductive layer remaining after the removal of the mask layer and the conductive layer over the mask layer forms a conductive pad. The method includes bonding a device to the conductive pad through a solder layer. The conductive pad is embedded in the solder layer.

公开(公告)号：US20190259719A1

公开(公告)日：2019-08-22

申请号：US16403631

申请日：2019-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US20200273827A1

公开(公告)日：2020-08-27

申请号：US16871032

申请日：2020-05-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US10651142B2

公开(公告)日：2020-05-12

申请号：US16403631

申请日：2019-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/52 ,  H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.

公开(公告)号：US10283471B1

公开(公告)日：2019-05-07

申请号：US15841336

申请日：2017-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chen-Shien Chen ,  Chen-En Yen ,  Cheng-Jen Lin ,  Chin-Wei Kang ,  Kai-Jun Zhan

IPC: H01L23/52 ,  H01L23/00

Abstract: A micro-connection structure is provided. The micro-connection structure includes an under bump metallurgy (UBM) pad, a bump and an insulating ring. The UBM pad is electrically connected to at least one metallic contact of a substrate. The bump is disposed on the UBM pad and electrically connected with the UBM pad. The insulating ring surrounds the bump and the UBM pad. The bump is separate from the insulating ring with a distance and the bump is isolated by a gap between the insulating ring and the bump.